Robust Co alloy design for Co interconnects using a self-forming barrier layer

Abstract

With recent rapid increases in Cu resistivity, RC delay has become an important issue again. Co, which has a low electron mean free path, is being studied as beyond Cu metal and is expected to minimize this increase in resistivity. However, extrinsic time-dependent dielectric breakdown has been reported for Co interconnects. Therefore, it is necessary to apply a diffusion barrier, such as the Ta/TaN system, to increase interconnect lifetimes. In addition, an ultrathin diffusion barrier should be formed to occupy as little area as possible. This study provides a thermodynamic design for a self-forming barrier that provides reliability with Co interconnects. Since Cr, Mn, Sn, and Zn dopants exhibited surface diffusion or interfacial stable phases, the model constituted an effective alloy design. In the Co-Cr alloy, Cr diffused into the dielectric interface and reacted with oxygen to provide a self-forming diffusion barrier comprising Cr2O3. In a breakdown voltage test, the Co-Cr alloy showed a breakdown voltage more than 200% higher than that of pure Co. The 1.2 nm ultrathin Cr2O3 self-forming barrier will replace the current bilayer barrier system and contribute greatly to lowering the RC delay. It will realize high-performance Co interconnects with robust reliability in the future.

Effect of Carbon-Doped Cu(Ni) Alloy Film for Barrierless Copper Interconnect

“…Thus, effective barriers are necessary to prevent interdiffusion or reaction between Cu and adjacent materials [5][6][7][8][9][10][11][12][13]. As integrated circuits are continuously scaling down to the nanometer range, their electrical resistivity significantly increases due to electron grain boundary scattering [14][15][16]. Moreover, the thickness of the barrier layer is unable to be further scaled down without significant deterioration in the device's reliability [3].…”