The digital electrostatic electron beam array lithography concept under development at the Oak Ridge National Laboratory proposes performing direct write electron beam lithography with a massively parallel array of electron emitters operating simultaneously within a digitally programmable microfabricated field emitter array (FEA). Recently we have concentrated our research efforts on the field emission (FE) properties of deterministically grown vertically aligned carbon nanofibers (VACNFs). We have measured the FE properties of isolated VACNFs using a moveable current probe and found that they have low FE turn-on fields and can achieve stable emission for extended periods of time in moderate vacuum. In order to use the VACNF in microfabricated FEA devices we have subjected them to a variety of processing phenomenon including reactive ion etching and plasma enhanced chemical vapor deposition, and found them to be quite robust. Using these processes we have fabricated operational gated cathode structures with single VACNFs cathodes. The issues involved in this fabrication process and the performance of these devices are discussed.

Vertically aligned carbon nanofibers ͑VACNFs͒ are extremely promising cathode materials for microfabricated field emission devices, due to their low threshold field to initiate electron emission, inherent stability, and ruggedness, and relative ease of fabrication at moderate growth temperatures. We report on a process for fabricating gated cathode structures that uses a single in situ grown carbon nanofiber as a field emission element. The electrostatic gating structure was fabricated using a combination of traditional micro-and nanofabrication techniques. High-resolution electron beam lithography was used to define the first layer of features consisting of catalyst sites for VACNF growth and alignment marks for subsequent photolithography steps. Following metallization of these features, plasma enhanced chemical vapor deposition ͑PECVD͒ was used to deposit a 1-m-thick interlayer dielectric. Photolithography was then used to expose the gate electrode pattern consisting of 1 m apertures aligned to the buried catalyst sites. After metallizing the electrode pattern the structures were reactive ion etched until the buried catalyst sites were released. To complete the devices, a novel PECVD process using a dc acetylene/ammonia/helium plasma was used to grow single VACNFs inside the electrostatic gating structures. The issues associated with the fabrication of these devices are discussed along with their potential applications.

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Abstract. Photolithography for patterns with periodicity in the illumination plane (2.5-D lithography) has seen rapid advances over the past decade, with the introduction of holographic lithography and the further development of phase-contrast and grayscale photolithography methods. However, each of these techniques suffers from substantial difficulties preventing further integration into device fabrication: a lack of parallel processing capabilities and dimension limitations. Here, we present a demonstration of controlled layer topography through modulation of both the exposure dose and exposure focal plane yielding reproducible 2.5-D patterns which are applied to the further development of plasmonic gratings. This process is entirely compatible with commercially available i-line photolithography and etch hardware, enabling a path to ready integration.