A highly strained GaAs=GaAs 0.64 Sb 0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 mm pulsed operation with a low threshold current density of 300 A=cm 2 . The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.
InAs self-organized quantum dots covered w i t h kI033&.6& layer have been grown on GaAs substrates by solid-source molecular beam epitaxy. The effect of the InGaAs thickness has been discussed. As-cleaved 2.54-mm-Iong laser diode using triple stacks of InAs QDs covered with 6.0 ML, I ~. & a 0 . 6 7 A s layer demonstrates a lasing wavelength of 1,214 nm and a threshoid current density of 124A/cm2. The ground-state saturation gain of 23cm-' is achieved due to an energy spacing of 85 meV between the ground and the first excited quantum dot levels and the high dot density.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.