1.3 [micro sign]m GaAs∕GaAsSb quantum well laser grown by solid source molecular beam epitaxy

Abstract

A highly strained GaAs=GaAs 0.64 Sb 0.36 single quantum well laser has been grown on GaAs (100) substrate by using solid source molecular beam epitaxy. The uncoated broad-area laser demonstrates 1.292 mm pulsed operation with a low threshold current density of 300 A=cm 2 . The spontaneous emission of the laser was also studied. The result reveals that the Auger recombination component dominates the threshold current at high temperature.

Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy

“…So far great efforts have been laid to replace the active InGaAs layer for 1.3 mm emission by different novel gain media such as InAs quantum dots (QDs) [1], dilute nitride quantum wells (QWs) [2] and type II bandgap GaAsSb QWs [3]. Devices with both continuous-wave lasing at high ambient temperatures and high-speed modulation at 10 Gbit/s have been demonstrated for both InAs QDs [4] and dilute nitride QWs [5] at 1.3 mm.…”