Optical study of GaAs1−Sb  layers grown on GaAs substrates by gas-source molecular beam epitaxy

Hsu, Hung-Pin; Huang, Jiao; Huang, Y. S.; Lin, Yu Ting; Lin, Hao‐Hsiung; Tiong, K. K.

doi:10.1016/j.matchemphys.2010.07.011

Cited by 8 publications

(5 citation statements)

References 25 publications

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“…Band gap tailoring of GaAs-based materials is an important task for hetero-epitaxial devices. Specifically, the incorporation of small fractions of antimony (Sb) into GaAs-based materials results in a significant reduction of the band gap 6 7 8 9 , which demonstrates the potential for mid-infrared range of electronic and optoelectronic applications, particularly for edge-emitting lasers 10 and vertical cavity surface emitting lasers (VCSELs) 11 . To be specific, GaAsSb alloy can be applied in data-communication lasers in the range of 1.3–1.5 μm 12 13 14 15 16 17 and GaInAs/GaAsSb multi-quantum well (MQWs) have been used as the gain medium for 2–3 μm type-ІІ MQWs laser 18 .…”

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confidence: 99%

“…However, in spite of the GaAsSb alloy’s potential applications, very little work has been done on the optical properties related to bulk GaAsSb materials 6 7 26 27 , namely, comprehensive spectroscopic characterization at low temperature range. The information about carrier dynamics, optical transition and their temperature dependent near band edge transitions properties are also scarce.…”

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confidence: 99%

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Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

Gao

Wei

Zhao

et al. 2016

Sci Rep

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We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.

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confidence: 99%

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confidence: 99%

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

Gao

Wei

Zhao

et al. 2016

Sci Rep

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“…Unfortunately, there have only been a few reports on the optical properties of GaAsSb materials [43][44][45][46][47][48][49][50]. In addition, GaAsSb has been recognized as an important material for use in high-performance optoelectronic devices, and its optical properties are thus significant for the improvement of the performance of these devices.…”

Section: Gasb Alloy Emission Propertiesmentioning

confidence: 99%

“…Hsu et al presented an optical study of low-Sb-component GaAs x Sb 1−x layers and identified the conduction to heavy-hole (HH) band and conduction to light-hole (LH) band transitions that were determined to originate from strain-induced valence band splitting by comparing the relative intensities of the photoreflectance (PR) and piezoreflectance (PzR) spectra [48]. The splitting behavior of the valence band relative to the Sb content is shown in Figure 7.…”

Section: Gasb Alloy Emission Propertiesmentioning

confidence: 99%

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

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“…As a consequence, understanding the carrier dynamics of the materials has become one of the key research topics for improving the performance of the devices. In recent years, researchers have focused on their growth technology, quantum well structure and optical properties [4][5][6][7][8][9]. Some researchers have investigated the effect of thermal annealing on GaAsSb-based materials.…”

Section: Introductionmentioning

confidence: 99%

Optical characteristics of GaAsSb alloy after rapid thermal annealing

Gao

Zhao

Fang

et al. 2017

Semicond. Sci. Technol.

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GaAsSb ternary alloy is a promising material for application in infrared optoelectronic devices. In this letter, the investigation of carrier recombination in the as-grown and rapid thermal annealing (RTA) treated GaAsSb samples has been carried out. It was found that after thermal treatment the emission of the GaAsSb material was enhanced and could be maintained up to room temperature. These phenomena can be ascribed to the decrease of non-radiative combination defects in the GaAsSb sample, which implies an improved crystal quality. Moreover, the localized exciton-longitudinal optical phonon interaction is slightly increased after RTA treatment. It is suggested that the interaction depends strongly on the localized states, and the photoluminescence emission intensity can be significantly increased after suitable RTA treatment. Promoting better optical emission in GaAsSb is very useful for its practical application.

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Optical study of GaAs1−Sb layers grown on GaAs substrates by gas-source molecular beam epitaxy

Cited by 8 publications

References 25 publications

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

Optical characteristics of GaAsSb alloy after rapid thermal annealing

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