Gang Bian received his Ph.D. degree in Chemistry from Jiangnan University in 2018. Then he joined the research group of Prof. Jian Zhu as a postdoctoral fellow at Nankai University. He focuses on the development of 2D covalent organic frameworks using solution-based approaches for electronic devices.
Controlled growth of metal–organic frameworks (MOFs) nanocrystals on requisite surfaces is highly desired for myriad applications related to catalysis, energy, and electronics. Here, this challenge is addressed by overlaying arbitrary surfaces with a thermally evaporated metal layer to enable the well‐aligned growth of ultralong quasi‐2D MOF nanoarrays comprising cobalt ions and thiophenedicarboxylate acids. This interfacial engineering approach allows preferred chelation of carboxyl groups in the ligands with the metal interlayers, thereby making possible the fabrication and patterning of MOF nanoarrays on substrates of any materials or morphologies. The MOF nanoarrays grown on porous metal scaffolds demonstrate high electrocatalytic capability for water oxidation, exhibiting a small overpotential of 270 mV at 10 mA cm−2, or 317 mV at 50 mA cm−2 as well as negligible decay of performance within 30 h. The enhanced performance stems from the improved electron and ion transport in the hierarchical porous nanoarrays consisting of in situ formed oxyhydroxide nanosheets in the electrochemical processes. This approach for mediating the growth of MOF nanoarrays can serve as a promising platform for diverse applications.
Understanding the effect of short channels on the performance of fieldeffect transistors (FETs) from emerging low-dimensional semiconductors is crucial to estimate their suitability in high-density integrated circuits. To this end, intricate and costly equipment capable of nanoscale photolithography or e-beam lithography is usually required to fabricate FETs with shrinking channel lengths. Here, the authors propose an economical suspended nanofiber lithography technique with short-channel processing capability, and compatibility with modern semiconductor foundries. By combining the merits of the near-field electrohydrodynamic printing of nanofibers and microscale photolithographic process, the authors successfully fabricate short channels with lengths as small as 48 nm via masks of suspended nanofibers, whose diameters are easily tuned by adjusting the printing conditions. This technique is further applied for exploring the performance of short-channel FETs using semiconductors such as single-walled carbon nanotubes or electrochemically-exfoliated MoS 2 . Their performance is comparable to those made from more demanding lithography methods. This economical nanofabrication technique is promising to be applied on a variety of semiconductors for highly integrated fabrication of submicron short-channel device arrays.
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