Scalable Submicron Channel Fabrication by Suspended Nanofiber Lithography for Short‐Channel Field‐Effect Transistors

Abstract

Understanding the effect of short channels on the performance of fieldeffect transistors (FETs) from emerging low-dimensional semiconductors is crucial to estimate their suitability in high-density integrated circuits. To this end, intricate and costly equipment capable of nanoscale photolithography or e-beam lithography is usually required to fabricate FETs with shrinking channel lengths. Here, the authors propose an economical suspended nanofiber lithography technique with short-channel processing capability, and compatibility with modern semiconductor foundries. By combining the merits of the near-field electrohydrodynamic printing of nanofibers and microscale photolithographic process, the authors successfully fabricate short channels with lengths as small as 48 nm via masks of suspended nanofibers, whose diameters are easily tuned by adjusting the printing conditions. This technique is further applied for exploring the performance of short-channel FETs using semiconductors such as single-walled carbon nanotubes or electrochemically-exfoliated MoS 2 . Their performance is comparable to those made from more demanding lithography methods. This economical nanofabrication technique is promising to be applied on a variety of semiconductors for highly integrated fabrication of submicron short-channel device arrays.

Thin-Film Transistors from Electrochemically Exfoliated In2Se3 Nanosheets

“…To investigate the electric properties of solution-processed In 2 Se 3 , we further prepared In 2 Se 3 single-flake and In 2 Se 3 thin-film FETs on a 300 nm SiO 2 /Si substrate. The channels of the FETs were fabricated by nanofiber masks (Figure 6) [23]. First, we used the diluted and concentrated In 2 Se 3 dispersion to adsorb the sparse In 2 Se 3 nanosheets and dense In 2 Se 3 thin films on a pre-treated SiO 2 /Si substrate by LbL assembly.…”

Water‐Surface‐Mediated Precise Patterning of Organic Single‐Crystalline Films via Double‐Blade Coating for High‐Performance Organic Transistors

“…[17][18][19][20][21] Several applications such as active-matrix organic light-emitting diodes (AMOLED) require high mobility while providing a sufficiently high current to rapidly drive the AMOLED. [22][23][24][25][26][27][28] The grain boundaries of organic semiconductor (OSC) thin films deteriorate the carrier mobility; thereby limiting further improvement in the electrical performance of OFETs. [6,20] Organic single-crystalline film-based OFETs exhibit better charge carrier mobility than multigrain thin films because of the absence of grain boundaries; [29] therefore, they offer applications in various fields.…”

Preparation of high positioning accuracy lattice patterns with polymeric microfibers derived from near‐field electrospinning

“…These fibers have been widely used in tissue engineering, 3,4 electronic devices, 5–7 textile engineering 8,9 and filter membranes 10–12 due to their large specific surface area 13,14 and high porosity 15,16 . In recent years, electrospinning also has shown significant prospects for the fabrication of high‐resolution, uniform patterned masks 17–19 and low‐cost, high‐precision manufacturing of flexible electronics 20–23 . Liu et al 24 printed high‐resolution photoresist micro‐nano patterns on the substrate to serve as a mask for the chemical etching process.…”

“…15,16 In recent years, electrospinning also has shown significant prospects for the fabrication of high-resolution, uniform patterned masks [17][18][19] and low-cost, high-precision manufacturing of flexible electronics. [20][21][22][23] Liu et al 24 printed high-resolution photoresist micro-nano patterns on the substrate to serve as a mask for the chemical etching process. Huang et al 25 prepared a piezoelectric sensor with self-similar poly vinylidene fluoride microfibers using electrohydrodynamic printing technology.…”