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We designed a nanoscale light extractor (NLE) for the efficient outcoupling and beaming of broadband light emitted by shallow, negatively charged nitrogen-vacancy (NV) centers in bulk diamond. The NLE consists of a patterned silicon layer on diamond and requires no etching of the diamond surface. Our design process is based on adjoint optimization using broadband time-domain simulations and yields structures that are inherently robust to positioning and fabrication errors. Our NLE functions like a transmission antenna for the NV center, enhancing the optical power extracted from an NV center positioned 10 nm below the diamond surface by a factor of more than 35, and beaming the light into a ±30° cone in the far field. This approach to light extraction can be readily adapted to other solid-state color centers.

Laser sail‐based spacecraft—where a powerful Earth‐based laser propels a lightweight outer‐space vehicle—have been recently proposed by the Breakthrough Starshot Initiative as a means of reaching relativistic speeds for interstellar space travel. The laser intensity at the sail required for this task is at least 1 GW m−2 and, at such high intensities, thermal management of the sail becomes a significant challenge even when using materials with low linear absorption coefficients. Silicon is proposed as one leading candidate material for the sail due to its low sub‐bandgap absorption and high index of refraction, which allows for low‐mass‐density designs. However, here it is shown that the temperature‐dependent linear absorption of silicon can lead to thermal runaway at temperatures above 400–500 K for even the most optimistic viable assumptions of the material quality. Additionally, above a design‐specific threshold laser intensity, nonlinear two‐photon absorption triggers thermal runaway regardless of initial temperature. Resonator‐based designs, which concentrate the field, exhibit lower threshold intensities than geometries that minimize the electric field such as Bragg reflectors.

Thermal management efforts in nanoscale devices must consider both the thermal properties of the constituent materials and the interfaces connecting them. It is currently unclear whether alloy/alloy semiconductor superlattices such as InAlAs/InGaAs have lower thermal conductivities than their constituent alloys. We report measurements of the crossplane thermal resistivity of InAlAs/InGaAs superlattices at room temperature, showing that the superlattice resistivities are larger by a factor of 1.2–1.6 than that of the constituent bulk materials, depending on the strain state and composition. We show that the additional resistance present in these superlattices can be tuned by a factor of 2.5 by altering the lattice mismatch and thereby the phonon-mode mismatch at the interfaces, a principle that is commonly assumed for superlattices but has not been experimentally verified without adding new elements to the layers. We find that the additional resistance in superlattices does not increase significantly when the layer thickness is decreased from 4 to 2 nm. We also report measurements of 250–1000 nm thick films of undoped InGaAs and InAlAs lattice-matched to InP substrates, for there is no published thermal conductivity value for the latter, and we find it to be 2.24 ± 0.09 at 22 °C, which is ∼2.7 times smaller than the widely used estimates.

The three-omega method, a powerful technique to measure the thermal conductivity of nanometer-thick films and the interfaces between them, has historically employed straight conductive wires to act as both heaters and thermometers. When investigating stochastically prepared samples such as two-dimensional materials and nanomembranes, residue and excess material can make it difficult to fit the required millimeter-long straight wire on the sample surface. There are currently no available criteria for how diverting three-omega heater wires around obstacles affects the validity of the thermal measurement. In this Letter, we quantify the effect of the wire curvature by performing three-omega experiments with a wide range of frequencies using both curved and straight heater geometries on SiO2/Si samples. When the heating wire is curved, we find that the measured Si substrate thermal conductivity changes by only 0.2%. Similarly, we find that wire curvature has no significant effect on the determination of the thermal resistance of an ∼65 nm SiO2 layer, even for the sharpest corners considered here, for which the largest measured ratio of the thermal penetration depth of the applied thermal wave to radius of curvature of the heating wire is 4.3. This result provides useful design criteria for three-omega experiments by setting a lower bound for the maximum ratio of the thermal penetration depth to wire radius of curvature.

Functionalization of diamond surfaces with TEMPO and other surface paramagnetic species represents one approach to the implementation of novel chemical detection schemes that make use of shallow quantum color defects such as silicon-vacancy (SiV) and nitrogen-vacancy (NV) centers. Yet, prior approaches to quantum-based chemical sensing have been hampered by the absence of high-quality surface functionalization schemes for linking radicals to diamond surfaces. Here, we demonstrate a highly controlled approach to the functionalization of diamond surfaces with carboxylic acid groups via all-carbon tethers of different lengths, followed by covalent chemistry to yield high-quality, TEMPO-modified surfaces. Our studies yield estimated surface densities of 4-amino-TEMPO of approximately 1.4 molecules nm −2 on nanodiamond (varying with molecular linker length) and 3.3 molecules nm −2 on planar diamond. These values are higher than those reported previously using other functionalization methods. The ζ-potential of nanodiamonds was used to track reaction progress and elucidate the regioselectivity of the reaction between ethenyl and carboxylate groups and surface radicals.

Submicrometer-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity and useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite the promising applications of hBN as a heat spreader, the thickness dependence of its cross-plane thermal conductivity is not known, and the cross-plane phonon mean free paths (MFPs) have not been measured. We measure the cross-plane thermal conductivity of hBN flakes exfoliated from bulk crystals. We find that submicrometer thick flakes exhibit thermal conductivities up to 8.1 ± 0.5 W m–1 K–1 at 295 K, which exceeds previously reported bulk values by more than 60%. Surprisingly, the average phonon mean free path is found to be several hundred nanometers at room temperature, a factor of 5 larger than previous predictions. When planar twist interfaces are introduced into the crystal by mechanically stacking multiple thin flakes, the cross-plane thermal conductivity of the stack is found to be a factor of 7 below that of individual flakes with similar total thickness, thus providing strong evidence that phonon scattering at twist boundaries limits the maximum phonon MFPs. These results have important implications for hBN integration in nanoelectronics and improve our understanding of thermal transport in two-dimensional materials.

Laser sail-based spacecraft -where a powerful earth-based laser propels a lightweight outer-space vehicle -have been recently proposed by the Breakthrough Starshot Initiative as a means of reaching relativistic speeds for interstellar spacetravel. The laser intensity at the sail required for this task is at least 1 GW•m −2 and, at such high intensities, thermal management of the sail becomes a significant challenge even when using materials with low absorption coefficients. Silicon has been proposed as one leading candidate material for the sail due to its low sub-bandgap absorption and high index of refraction, which allows for low-mass-density designs. However, here we show that the temperature-dependent bandgap of silicon combined with two-photon absorption processes can lead to thermal runaway for even the most optimistic viable assumptions of the material quality. From our calculations, we set bounds on the maximum laser intensities that can be used for a thermally stable, Si-based laser sail.