Very few nonlinear optical materials are actually useful for high throughput all-optical devices. However, AlGaAs does satisfy all of the nonlinear optical figures of merit when used with photons of energy less than one half the semiconductor bandgap. Here we review our measurements of the pertinent nonlinear coefficients in waveguides and various device applications to all-optical switching in the communications band around 1550 nm.

We report what we believe to be the first demonstration of a Kerr-lens mode-locked Cr(3+):LiSrAlF(6)laser that is pumped by a single narrow-stripe AlGaInP laser diode with a diffraction-limited output beam. A novel low-loss three-mirror laser cavity design is described in which strong, localized Kerr lensing was exploited such that 75-fs-duration pulses were obtained for only 36mW of incident pump power. This pump power was maintained for 18h by just three AA batteries as the electrical power source. We have shown that mode locking can be sustained for pump powers as low as 22mW.

We report the use of a novel impurity free vacancy disordering technique which has been used to produce waveguides with different Kerr-type nonlinear coefficients. The technique relies on standard SiO2 dielectric caps to promote disordering and Ga2O3 caps to suppress disordering. Band-gap shifts of around 40 nm and consequent changes in n2 of more than 60% are reported.

We present experimental evidence to demonstrate the feasibility of a promising new quasi-phase-matching technique in AlGaAs multiple-quantum-well waveguides. Non-phase-matched second-harmonic-generation measurements indicate that, for sub-half-bandgap excitation near 1.5 microm , quantum-well intermixing by impurity-free vacancy disordering results in a reduction of the nonlinear susceptibility chi((2))(zxy) (~340 pm/V) by 17%. Relatively low intermixed waveguide losses, and the high spatial resolution of the impurity-free vacancy disordering process, suggest that periodic intermixing along the direction of propagation should lead to useful frequency-conversion efficiencies.

The spin relaxation times of electrons in InGaAs(P)/InGaAsP multiple quantum wells have been directly measured as a function of well width using an ultrashort pulse colour centre laser. The times measured range from 20 to 5 ps, considerably faster than previously determined in GaAs quantum wells. In addition, a fast, all-optical polarization switch based on a spin-sensitive optical nonlinearity is demonstrated at a wavelength of 1.52 µm. This operating wavelength and the observed switch recovery time of 5.5 ps make it a potentially useful element for future all-optical soliton communication systems.