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The main features of electrochemical deposition of coatings based on Ni-W binary alloy in the pulse current mode using pyrophosphate electrolytes were studied. Two electrolytes with a pH of 8.7 and 9.5 were used. The deposition was carried out with the current density varying in the range of 0.01-0.1 A•cm −2 , and the duty cycle (the relative pulse duration) was changed within the range 20-100%. The surface morphology and elemental and phase composition of the coatings were studied by scanning electron microscopy, energy-dispersive X-ray microanalysis and X-ray diffractometry. The experimental conditions allowing us to achieve the maximum Faradaic efficiency and W content in the coatings were determined. It was found that the pulse current mode enabled the fabrication of crack-free coatings with a thickness greater than 6 µm.

a b s t r a c tQuantification of Ge in Si 1-x Ge x structures (0.092 ≤ x ≤ 0.78) was carried out by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrometry (SNMS). A good linear correlati on ( R 2 N 0 . 9 99 7) o f th e i nt e n si ty ra ti os of se c on da ry i on s Ge Cs 2 + /S i Cs 2 + a nd 74 Ge − / 30 S i − a n d p o s t -i o n i z e d s p u t t e r e d n e u t r a l s 70 Ge + / 28 S i + w i th Ge c on ce nt ra ti on wa s ob ta i n e d. T h e c al i b ra ti on da ta w er e us e d f o r quantitative depth profiling of [10 × (12.3 nm Si 0.63 Ge 0.37 /34 nm Si)] structures on Si. Satisfactory compliance of the quantified Ge concentration in SiGe layers with the values obtained by high-resolution X-ray diffraction was revealed for both techniques. SIMS and SNMS experimental profiles were fitted using Hofmann's mixingroughness-information depth (MRI) model. In the case of TOF-SIMS, the quality of the reconstruction was better th a n f or S NM S s i nc e n ot on l y th e pr og re s si n g ro ug he n i ng , b ut a l so th e c ra te r e f f e ct a nd ot he r p ro c e ss e s unaccounted in the MRI simulation could have a significant impact on plasma sputter depth profiling.

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