Terahertz (THz) radiation, which lies in the far-infrared region, is at the interface of electronics and photonics. Narrow-band THz radiation can be produced by free-electron lasers and fast diodes. Broadband THz radiation can be produced by thermal sources and, more recently, by table-top laser-driven sources and by short electron bunches in accelerators, but so far only with low power. Here we report calculations and measurements that confirm the production of high-power broadband THz radiation from subpicosecond electron bunches in an accelerator. The average power is nearly 20 watts, several orders of magnitude higher than any existing source, which could enable various new applications. In particular, many materials have distinct absorptive and dispersive properties in this spectral range, so that THz imaging could reveal interesting features. For example, it would be possible to image the distribution of specific proteins or water in tissue, or buried metal layers in semiconductors; the present source would allow full-field, real-time capture of such images. High peak and average power THz sources are also critical in driving new nonlinear phenomena and for pump-probe studies of dynamical properties of materials.

Using synchrotron radiation as an ultrabright infrared source, we have been able to map the distributions of functional groups such as proteins, lipids, and nucleic acids inside a single living cell with a spatial resolution of a few microns. In particular, we have mapped the changes in the lipid and protein distributions in both the final stages of cell division and also during necrosis.

The spatial resolution for infrared microspectroscopy is investigated to determine the practical limits imposed by diffraction or optical aberrations. Quantitative results are obtained using high brightness synchrotron radiation, which serves as a diffraction-limited infrared “point source” for the microscope. The measured resolving power is in good agreement with diffraction theory, including a ∼ 30% improvement for a confocal optical arrangement. The diffraction calculation also shows how the confocal setup leads to better image contrast. The full width at half maximum of the instrument’s resolution pattern is approximately λ/2 for this arrangement. One achieves this diffraction limit when the instrument’s apertures define a region having dimensions equal to the wavelength of interest. While commercial microspectrometers are well corrected for optical aberrations (allowing diffraction-limited results), the standard substrates used for supporting specimens introduce chromatic aberrations. An analysis of this aberration is also presented, and correction methods described.

We report the observation of two signatures of a pressure-induced topological quantum phase transition in the polar semiconductor BiTeI using x-ray powder diffraction and infrared spectroscopy. The x-ray data confirm that BiTeI remains in its ambient-pressure structure up to 8 GPa. The lattice parameter ratio c/a shows a minimum between 2.0-2.9 GPa, indicating an enhanced c-axis bonding through p(z) band crossing as expected during the transition. Over the same pressure range, the infrared spectra reveal a maximum in the optical spectral weight of the charge carriers, reflecting the closing and reopening of the semiconducting band gap. Both of these features are characteristics of a topological quantum phase transition and are consistent with a recent theoretical proposal.

Scattering scanning near-field optical microscopy (s-SNOM) has emerged as a powerful imaging and spectroscopic tool for investigating nanoscale heterogeneities in biology, quantum matter, and electronic and photonic devices. However, many materials are defined by a wide range of fundamental molecular and quantum states at far-infrared (FIR) resonant frequencies currently not accessible by s-SNOM. Here we show ultrabroadband FIR s-SNOM nanoimaging and spectroscopy by combining synchrotron infrared radiation with a novel fast and low-noise copper-doped germanium (Ge:Cu) photoconductive detector. This approach of FIR synchrotron infrared nanospectroscopy (SINS) extends the wavelength range of s-SNOM to 31 μm (320 cm −1 , 9.7 THz), exceeding conventional limits by an octave to lower energies. We demonstrate this new nanospectroscopic window by measuring elementary excitations of exemplary functional materials, including surface phonon polariton waves and optical phonons in oxides and layered ultrathin van der Waals materials, skeletal and conformational vibrations in molecular systems, and the highly tunable plasmonic response of graphene.

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