Remote hydrogen plasma exposure is used to study the transport of atomic hydrogen, H0, through reoxidized-nitrided oxides and SiO2 and to quantify H0-induced degradation of their interfaces with silicon. It is directly demonstrated that (1) H0 is extremely reactive and produces large numbers of interface states; (2) the transport of H0 to the silicon/oxide interface is strongly suppressed in reoxidized-nitrided oxides; and (3) this suppression of the H0 transport is mainly responsible for the much slower interface degradation of reoxidized-nitrided oxides during high-field, hot-electron stress as compared to thermal oxide.
Using a modified electron spin resonance technique known as spin-dependent recombination, we have found that channel hot hole injection in n channel metal oxide silicon (MOS) transistors creates the trivalent silicon dangling bond defect known as the Pbo center. This letter reports the first direct identification of the atomic structure of interfacial point defects created by channel hot carrier stressing in MOS transistors.
We report the first observation of a nitrogen dangling bond center in nitrided thermally grown silicon dioxide films on silicon. Interpretation of the 14N hyperfine parameters indicates that the unpaired electron wave function is strongly localized on the central nitrogen and that the wave function is highly p in character.
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