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A comprehensive experimental characterization of lateral DMOS electrical parameters over the temperature range 30-300 OC is presented. Simple, analytic models are used to explain the observed behavior and to offer physical insight into the effects of temperature on LDMOS performance. A novel test structure is utilized to unambiguously separate channel-region effects from drift-region effects. It is shown that the LDMOS channel mobility follows a T-2.5 temperature dependence, which is significantly more severe than the T-1.5 dependence of conventional CMOS channel mobility. Other key temperature dependent parameters include the threshold voltage, on-state resistance, saturation current, breakdown voltage, and leakage current, which places a fundamental limitation on the high-temperature operation of the LDMOS transistor.

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