The effect of temperature on lateral DMOS transistors in a power IC technology

Dolny, G.; Nostrand, G.E.; Hill, Karen E.

doi:10.1109/16.127492

Cited by 35 publications

(10 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The T −2.5 dependence measured on LDMOS channel mobility is significantly more severe than the T −1.5 -T −1.8 observed in conventional CMOS utilizing the same oxidation and polysilicon gate process conditions [119,120]. This may be attributed to the graded lateral doping profile in LDMOS compared to typically uniform profiles in most of the channels in conventional CMOS.…”

Section: Inversion Carrier Mobilitymentioning

confidence: 84%

See 1 more Smart Citation

High-Voltage and Power Transistors

El-Kareh¹,

Hutter²

2015

Silicon Analog Components

View full text Add to dashboard Cite

This chapter focuses mainly on the drain-extended MOS transistor, DEMOS, for high voltage applications, and on the lateral double-diffused MOS transistor, LDMOS, for high power applications. In both cases, the drain is extended with a lightly-doped region, referred to as the drift region, to sustain the high voltage. The chapter begins with an analysis of the drift region and its optimization, typically by reduced surface-field (RESURF) techniques. The transistor switching performance is then analyzed, followed by a discussion of DEMOS and LDMOS design considerations and characteristics. High-voltage and high-current effects are then described, including quasi-saturation, body current, on-state breakdown, and safe operating area (SOA). The chapter concludes with selected high-voltage device applications. IntroductionThe MOSFETs discussed in Chap. 6 are designed for digital, analog, mixed-signal, and RF applications that operate in the low-to-medium voltage range of about 0.8-6 V. Many analog applications, however, require transistors that can handle voltages above 20 V and currents in the ampere range. Those transistors are referred to as high-voltage and power transistors. This chapter provides a comprehensive analysis of the drain-extended MOS transistor (DEMOS), for high-voltage and low-current applications, and the lateral double-diffused MOS (LDMOS) transistor, LDMOS, for power applications. (The "D" in LDMOS describes the sequential (double) diffusion of boron and arsenic through the same oxide opening, defining a precise channel length (Chap. 9). The "L" means that the current path is parallel to the silicon surface (lateral), as opposed to "V" in VDMOS where the current is nearly vertical to the silicon surface.) Schematic cross sections of both transistors (Table 7.1). The DEMOS is typically processed without added process complexity, whereas the LDMOS requires optimization of the P-body and N-drift regions to achieve high voltages and currents while minimizing the drain-to-source resistance and transistor area.The interest in bipolar, CMOS, and DMOS (BCD) technologies has been driven primarily by the proliferation of portable electronics, automotive electronics, and the need for energy efficiency. These applications cluster around different operating points, with 24 V for portable electronics; 60 V for automotive, solar, and LED backlighting; 85 V for power over Ethernet; 120 V for telecommunication; and 700 V for offline LED lighting, consumer, and industrial applications. As a result, BCD is now the technology of choice to realize power ICs by most integrated device manufacturers (IDM) and foundries [1][2][3][4][5].This chapter focuses mainly on transistors with voltage capabilities in the range of 20-700 V, where the bulk of the product applications lie.

show abstract

Section: Inversion Carrier Mobilitymentioning

confidence: 84%

“…6). Thus, the temperature coefficient of saturation current depends on the relative magnitude of the V T and μ eff and can be negative, positive, or zero [119,121,122]. Typically, at lower V GS values, the threshold voltage-dependent component dominates and saturation current increases with temperature.…”

Section: Inversion Carrier Mobilitymentioning

confidence: 97%

High-Voltage and Power Transistors

El-Kareh¹,

Hutter²

2015

Silicon Analog Components

View full text Add to dashboard Cite

show abstract

“…In the reference, the temperature coefficient of the threshold voltage has been reported to be 5.2 mV/°C [3] and the temperature coefficient of the specific on-resistance has been reported to be 0.4 mWmm 2 /°C. In the reference, the temperature coefficient of the threshold voltage has been reported to be 5.2 mV/°C [3] and the temperature coefficient of the specific on-resistance has been reported to be 0.4 mWmm 2 /°C.…”

Section: Temperature Dependence Of Device Characteristicsmentioning

confidence: 99%

“…The temperature dependence of the device characteristics has been discussed above. In the reference, the temperature coefficient of the threshold voltage has been reported to be 5.2 mV/°C [3] and the temperature coefficient of the specific on-resistance has been reported to be 0.4 mWmm 2 /°C. Our measurements indicate a temperature coefficient of the specific on-resistance almost identical to the published value, while the temperature coefficient of the threshold value is somewhat different from the published value.…”

Section: Temperature Dependence Of Device Characteristicsmentioning

confidence: 99%

See 1 more Smart Citation

Device parameter dependence of temperature characteristics of lateral power MOSFET formed by solid‐phase epitaxy

Kodama¹,

Sugiyama²,

Uesugi³

2001

Electron. Comm. Jpn. Pt. II

View full text Add to dashboard Cite

SUMMARYThe device parameter dependence of temperature characteristics is evaluated for lateral power MOSFET having buried gates in the lower channel area and having trench gate/drains, produced by the solid-phase epitaxy method. The device parameters considered were the gate length and the n-drift length. The temperature coefficient (change rate) of the threshold value depends on the gate length and this tendency tends to increase as the gate length increases. However, there was no dependence on the n-drift length. In addition, the temperature coefficient of the specific onresistance depends on the n-drift length, to a degree that increases as the n-drift length increases. However, there was no dependence on the gate length. The above facts indicate that the temperature dependence of the device characteristics tends to decrease as the device size decreases.

show abstract

Device parameter dependence of temperature characteristics of lateral power MOSFET formed by solid‐phase epitaxy

Kodama

Sugiyama

Uesugi

2001

Electron Comm Jpn Pt II

View full text Add to dashboard Cite

The device parameter dependence of temperature characteristics is evaluated for lateral power MOSFET having buried gates in the lower channel area and having trench gate/drains, produced by the solid‐phase epitaxy method. The device parameters considered were the gate length and the n‐drift length. The temperature coefficient (change rate) of the threshold value depends on the gate length and this tendency tends to increase as the gate length increases. However, there was no dependence on the n‐drift length. In addition, the temperature coefficient of the specific on‐resistance depends on the n‐drift length, to a degree that increases as the n‐drift length increases. However, there was no dependence on the gate length. The above facts indicate that the temperature dependence of the device characteristics tends to decrease as the device size decreases. © 2001 Scripta Technica, Electron Comm Jpn Pt 2, 84(5): 55–61, 2001

show abstract

The effect of temperature on lateral DMOS transistors in a power IC technology

Cited by 35 publications

References 17 publications

High-Voltage and Power Transistors

High-Voltage and Power Transistors

Device parameter dependence of temperature characteristics of lateral power MOSFET formed by solid‐phase epitaxy

Device parameter dependence of temperature characteristics of lateral power MOSFET formed by solid‐phase epitaxy

Contact Info

Product

Resources

About