The oxidation of anion-and cation-rich indium phosphide ͑001͒ has been investigated by exposure to unexcited molecular oxygen. Indium phosphide oxidation is an activated process and strongly structure sensitive. The In-rich ␦(2ϫ4) surface reacts with oxygen at 300 K and above. Core levelx-ray photoemission spectra have revealed that the O 2 dissociatively chemisorbs onto the ␦(2ϫ4), inserting into the In-In dimer and In-P back bonds. By contrast, the P-rich (2ϫ1) reconstruction does not absorb oxygen up to 5ϫ10 5 Langmuir at 300 K, as judged by the unperturbed reflectance difference spectrum and low energy electron diffraction pattern. Above 455 K, oxygen reacts with the (2ϫ1) inserting preferentially into the In-P back bonds and to a lesser extent into the phosphorus dimer bonds.
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