Articles you may be interested inMultilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories Appl. Phys. Lett. 103, 263502 (2013); 10.1063/1.4855155 Polarization behavior of poly(vinylidene fluoride-trifluoroethylene) copolymer ferroelectric thin film capacitors for nonvolatile memory application in flexible electronics J. Appl. Phys. 108, 094102 (2010); 10.1063/1.3500428 Spatial variations in local switching parameters of ferroelectric random access memory capacitors Appl. Phys. Lett. 95, 092901 (2009); 10.1063/1.3192354 Degradation and recovery of polarization under synchrotron x rays in Sr Bi 2 Ta 2 O 9 ferroelectric capacitors J. Appl. Phys. 97, 044106 (2005); 10.1063/1.1851598Polarization reversal kinetics of a lead zirconate titanate thin-film capacitor for nonvolatile memory
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.