Weyl semimetals are a class of materials that can be regarded as three-dimensional analogs of graphene upon breaking time-reversal or inversion symmetry. Electrons in a Weyl semimetal behave as Weyl fermions, which have many exotic properties, such as chiral anomaly and magnetic monopoles in the crystal momentum space. The surface state of a Weyl semimetal displays pairs of entangled Fermi arcs at two opposite surfaces. However, the existence of Weyl semimetals has not yet been proved experimentally. Here, we report the experimental realization of a Weyl semimetal in TaAs by observing Fermi arcs formed by its surface states using angle-resolved photoemission spectroscopy. Our first-principles calculations, which match remarkably well with the experimental results, further confirm that TaAs is a Weyl semimetal.
We report the temperature evolution of the detailed electronic band structure in FeSe singlecrystals measured by angle-resolved photoemission spectroscopy (ARPES), including the degeneracy removal of the dxz and dyz orbitals at the Γ/Z and M points, and the orbital-selective hybridization between the dxy and d xz/yz orbitals. The temperature dependences of the splittings at the Γ/Z and M points are different, indicating that they are controlled by different order parameters. The splitting at the M point is closely related to the structural transition and is attributed to orbital ordering defined on Fe-Fe bonds with a d-wave form in the reciprocal space that breaks the rotational symmetry. In contrast, the band splitting at the Γ/Z points remains at temperature far above the structural transition. Although the origin of this latter splitting remains unclear, our experimental results exclude the previously proposed ferro-orbital ordering scenario.
Two-dimensional topological insulators with a large bulk band gap are promising for experimental studies of quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in predicting large-gap two-dimensional topological insulator candidates, none of them have been experimentally demonstrated to have a full gap, which is crucial for quantum spin Hall effect. Here, by combining scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal that ZrTe 5 crystal hosts a large full gap of ∼100 meV on the surface and a nearly constant density of states within the entire gap at the monolayer step edge. These features are well reproduced by our first-principles calculations, which point to the topologically nontrivial nature of the edge states.
Community structure is one of the most important properties in networks, and community detection has received an enormous amount of attention in recent years. Modularity is by far the most used and best known quality function for measuring the quality of a partition of a network, and many community detection algorithms are developed to optimize it. However, there is a resolution limit problem in modularity optimization methods. In this study, a memetic algorithm, named Meme-Net, is proposed to optimize another quality function, modularity density, which includes a tunable parameter that allows one to explore the network at different resolutions. Our proposed algorithm is a synergy of a genetic algorithm with a hill-climbing strategy as the local search procedure. Experiments on computer-generated and real-world networks show the effectiveness and the multiresolution ability of the proposed method.
Topological semimetals are characterized by symmetry-protected band crossings, which can be preserved in different dimensions in momentum space, forming zero-dimensional nodal points, one-dimensional nodal lines, or even two-dimensional nodal surfaces. Materials harboring nodal points and nodal lines have been experimentally verified, whereas experimental evidence of nodal surfaces is still lacking. Here, using angle-resolved photoemission spectroscopy (ARPES), we reveal the coexistence of Dirac nodal surfaces and nodal lines in the bulk electronic structures of ZrSiS. As compared with previous ARPES studies on ZrSiS, we obtained pure bulk states, which enable us to extract unambiguously intrinsic information of the bulk nodal surfaces and nodal lines. Our results show that the nodal lines are the only feature near the Fermi level and constitute the whole Fermi surfaces. We not only prove that the low-energy quasiparticles in ZrSiS are contributed entirely by Dirac fermions but also experimentally realize the nodal surface in topological semimetals.
By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance (XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center Γ and one ellipsoidal electron FS at the BZ boundary X. The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but shares many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals.
By using angle-resolved photoemission spectroscopy combined with first-principles calculations, we reveal that the topmost unit cell of ZrSnTe crystal hosts two-dimensional (2D) electronic bands of topological insulator (TI) state, though such a TI state is defined with a curved Fermi level instead of a global band gap. Furthermore, we find that by modifying the dangling bonds on the surface through hydrogenation, this 2D band structure can be manipulated so that the expected global energy gap is most likely to be realized. This facilitates the practical applications of 2D TI in heterostructural devices and those with surface decoration and coverage. Since ZrSnTe belongs to a large family of compounds having the similar crystal and band structures, our findings shed light on identifying more 2D TI candidates and superconductor-TI heterojunctions supporting topological superconductors.Comment: 5 pages, 4 figure
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