It is a challenge to synthesize materials that possess the properties of biological muscles-strong, elastic and capable of self-healing. Herein we report a network of poly(dimethylsiloxane) polymer chains crosslinked by coordination complexes that combines high stretchability, high dielectric strength, autonomous self-healing and mechanical actuation. The healing process can take place at a temperature as low as -20 °C and is not significantly affected by surface ageing and moisture. The crosslinking complexes used consist of 2,6-pyridinedicarboxamide ligands that coordinate to Fe(III) centres through three different interactions: a strong pyridyl-iron one, and two weaker carboxamido-iron ones through both the nitrogen and oxygen atoms of the carboxamide groups. As a result, the iron-ligand bonds can readily break and re-form while the iron centres still remain attached to the ligands through the stronger interaction with the pyridyl ring, which enables reversible unfolding and refolding of the chains. We hypothesize that this behaviour supports the high stretchability and self-healing capability of the material.

Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be expected in a wearable device.

A polymer is described that is conductive and stretchable, which can lead to electronics that can conform to the human body.

A self-healing dielectric elastomer is achieved by the incorporation of metal-ligand coordination as cross-linking sites in nonpolar polydimethylsiloxane (PDMS) polymers. The ligand is 2,2'-bipyridine-5,5'-dicarboxylic amide, while the metal salts investigated here are Fe(2+) and Zn(2+) with various counteranions. The kinetically labile coordination between Zn(2+) and bipyridine endows the polymer fast self-healing ability at ambient condition. When integrated into organic field-effect transistors (OFETs) as gate dielectrics, transistors with FeCl2 and ZnCl2 salts cross-linked PDMS exhibited increased dielectric constants compared to PDMS and demonstrated hysteresis-free transfer characteristics, owing to the low ion conductivity in PDMS and the strong columbic interaction between metal cations and the small Cl(-) anions which can prevent mobile anions drifting under gate bias. Fully stretchable transistors with FeCl2-PDMS dielectrics were fabricated and exhibited ideal transfer characteristics. The gate leakage current remained low even after 1000 cycles at 100% strain. The mechanical robustness and stable electrical performance proved its suitability for applications in stretchable electronics. On the other hand, transistors with gate dielectrics containing large-sized anions (BF4(-), ClO4(-), CF3SO3(-)) displayed prominent hysteresis due to mobile anions drifting under gate bias voltage. This work provides insights on future design of self-healing stretchable dielectric materials based on metal-ligand cross-linked polymers.

Challenge of developing new formulations of water-in-salt electrolytes are addressed via mixed cation strategy: cheaper (by at least an order of magnitude) and more soluble salts featuring alkali cations beyond lithium, such as potassium, are used to create the water-in-salt condition.

Nonconjugated segments in polymer semiconductors have been utilized to improve the processability of semiconducting polymers. Recently, several reports have described the improvement of stretchability of polymer semiconductors by incorporating nonconjugated spacers. However, the effect of relative flexibility of such conjugation breakers on mechanical and electrical properties has not yet been studied systematically. Here, conjugation breakers with different chain length and rigidity are incorporated into the backbone of diketopyrrolopyrrole-based semiconductors. Interestingly, it is observed that the longer and more flexible conjugation breakers result in greater ductility and lower elastic modulus without significantly affecting mobility. The enhancement of stretchability is attributed to the reduced modulus and the decrease in crystallinity, as confirmed by X-ray diffraction. With this newly established molecular design, transistors are prepared with a semiconducting polymer containing dodecyl segments as conjugation breakers. It is observed that this polymer retains a mobility of >0.36 cm 2 V −1 s −1 at 100% strain, and after 100 cycles at 50% strain. Finally, its high stability against strain is also observed with a fully stretchable transistor fabricated. Taken together, the above results indicate that molecular engineering of conjugated polymers, i.e., by incorporating suitable conjugation breakers, can effectively tune mechanical properties without significantly compromising their electrical properties.

Charge transport through single molecules can be influenced by the charge and spin states of redox-active metal centres placed in the transport pathway. These molecular intrinsic properties are usually addressed by varying the molecule's electrochemical and magnetic environment, a procedure that requires complex setups with multiple terminals. Here we show that oxidation and reduction of organometallic compounds containing either Fe, Ru or Mo centres can solely be triggered by the electric field applied to a two-terminal molecular junction. Whereas all compounds exhibit bias-dependent hysteresis, the Mo-containing compound additionally shows an abrupt voltage-induced conductance switching, yielding high-to-low current ratios exceeding 1000 at voltage stimuli of less than 1.0 V. DFT calculations identify a localized, redox-active molecular orbital that is weakly coupled to the electrodes and closely aligned with the Fermi energy of the leads because of the spin-polarised ground state unique to the Mo centre. This situation opens an additional slow and incoherent hopping channel for transport, triggering a transient charging effect of the entire molecule and a strong hysteresis with unprecedented high low-to-high current ratios.

A series of X(depe)2FeC≡C-C≡CFe(depe)2X complexes (depe =1,2-bis(diethylphosphino)ethane; X = I 1, NCMe 2, N2 3, C2H 4, C2SnMe3 5, C4SnMe3 6, NCSe 7, NCS 8, CN 9, SH 10, and NO2 11) was designed to study the influence of the anchor group on organometallic molecular transport junctions to achieve high-conductive molecular wires. The FeC4Fe core is electronically functional due to the redox-active Fe centers and sp-bridging ligands allowing a strong electronic delocalization. 1-11 were characterized by elemental analyses, X-ray diffraction, cyclic voltammetry, NMR, IR, and Raman spectroscopy. DFT calculations on model compounds gave the HOMO/LUMO energies. 5-9 were investigated in mechanically controllable break-junctions. For 9, unincisive features at 8.1 × 10(-7) G0 indicate that sterical reasons prevent stable junctions to form or that the coordinative binding motif prohibits electron injection. 7 and 8 with the hitherto unexploited coordinatively binding end groups NCSe and NCS yielded currents of 1.3 × 10(-9) A (7) and 1.8 × 10(-10) A (8) at ±1.0 V. The SnMe3 in 5 and 6 splits off, yielding junctions with covalent C-Au bonds and currents of 6.5 × 10(-7) A (Au-5'-Au) or 2.1 × 10(-7) A (Au-6'-Au). Despite of a length of almost 2 nm, the Au-5'-Au junction reaches 1% of the maximum current assuming one conductance channel in quantum point contacts. Additionally, the current noise in the transport data is considerably reduced for the covalent C-Au coupling compared to the coordinative anchoring of 7-9, endorsing C-Au coupled organometallic complexes as excellent candidates for low-ohmic molecular wires.