We present direct evidence for complex p-wave order parameter symmetry and the presence of dynamical chiral order parameter domains of the form px +/- ipy in the ruthenate superconductor Sr2RuO4. The domain structure creates differences in the magnetic field modulation of the critical current of Josephson junctions fabricated on orthogonal faces of Sr2RuO4 single crystals. Transitions between the chiral states of a domain or the motion of domain walls separating them generates telegraph noise in the critical current as a function of magnetic field or time and is responsible for hysteresis observed in field sweeps of the critical current. The presence of such domains confirms the p-wave triplet spin and complex (broken time-reversal symmetry) nature of the superconducting pairing state in Sr2RuO4.

We have synthesized a material consisting of conducting metal oxide (MoO3−x) nanoclusters embedded in a high-dielectric-strength insulator (Al2O3) matrix. The resistivity of this material can be customized by varying the concentration of the MoO3−x nanoclusters. The Al2O3 protects the MoO3−x from stoichiometry change, thus conserving the number of carriers and maintaining a high dielectric strength. This composite material is grown by atomic layer deposition, a thin film deposition technique suitable for coating 3D structures. We applied these atomic layer deposition composite films to our 3D electron-optical micro electrical mechanical systems devices and greatly improved their performance.

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Abstract. The digital pattern generator (DPG) is a complex electron-optical MEMS that pixelates the electron beam in the reflective electron beam lithography (REBL) e-beam column. It potentially enables massively parallel printing, which could make REBL competitive with optical lithography. The development of the REBL DPG, from the CMOS architecture, through the lenslet modeling and design, to the fabrication of the MEMS device, is described in detail. The imaging and printing results are also shown, which validate the pentode lenslet concept and the fabrication process.

In electrostatic electron optics charging on the surfaces of insulators separating the electrodes can cause undesired beam fluctuation. In prior work, the authors showed that coating the insulators with a film deposited by atomic layer deposition (ALD) could lead to acceptably low charging effects in the reflection electron beam lithography system. However, the stability of the resistivity can also be affected by contaminants present in the vacuum environment of the electron beam tool. The mechanism of formation for carbon layers typically involves the cracking of hydrocarbon contaminants adsorbed on the film surface by photon, electrons, or heat. This work describes changes in resistivity of ALD films of zinc-zirconium oxide and tantalum-niobium oxide 40 nm thick under different operating conditions. In a vacuum system utilizing an oil rough pump and a turbo pump, <0.01 C/cm 2 bombardment with 309 V electrons results in about 1 order of magnitude reduction in surface resistance. This effect was not observed in an ion-pumped system suggesting that carbon contamination is the culprit. XPS measurements confirmed this suspicion. Improved results on a new material under development are presented.