The drift mobility of electron carriers in vitreous selenium and in arsenic–selenium glasses containing up to 8% As, has been measured over a range of temperature and electric field. The low‐field data for selenium itself are in agreement with those in the literature, whilst at higher fields the mobility is found to increase in a manner similar to that observed for hole carriers in selenium, and for the mobility and conductivity in a number of other disordered semiconductors. The electron mobility in arsenic‐containing glasses is also field‐dependent, whilst the magnitude of the mobility decreases with increasing arsenic concentration. How‐ever, the effect of arsenic addition is found to be smaller than has been reported in the case of evaporated amorphous films. A model is advanced to account for the behaviour in terms of current theories of the disordered state.
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