Giant blue shift of photoluminescence in strongly excited type-II ZnSe/BeTe superlattices

Zaı̆tsev, S. V.; Kulakovskiǐ, V. D.; Максимов, А. А.; Pronin, D. A.; Tartakovskii, I. I.; Gippius, N. A.; Litz, M.Th.; Fisher, Francis D.; Waag, A.; Yakovlev, D. R.; Ossau, W.; Landwehr, G.

doi:10.1134/1.567525

Cited by 28 publications

(45 citation statements)

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“…These results are in good agreement with studies of the ZnSe/BeTe type -II heterosystem [15,16]. To summarize we can state that a quantitative understanding has been achieved of the density dependence luminescence of CdS/ZnSe SQW samples.…”

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confidence: 86%

Density dependent luminescence properties of CdS/ZnSe single quantum wells

Priller

Schmidt

Dremel

et al. 2004

phys. stat. sol. (c)

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PACS 78.47.+p, 78.55.Et, 78.67.De CdS/ZnSe is a quaternary type II system, which allows to tune the luminescence over a considerable fraction of the visible spectrum. We present here theoretical and experimental investigations of the density dependent blue shift of the emission of single quantum wells under cw excitation and on the luminescence dynamics after pulsed excitation as a function of the CdS well width.1 Introduction CdS/ZnSe single and multiple quantum wells (SQW and MQW) and superlattices (SL) form a remarkable, strained, quaternary type II system. The emission can be tuned by a variation of the layer widths from 2.0 eV to 2.7 eV, i.e. over a substantial fraction of the visible spectrum [1,2,3]. The conduction band offset of the CdS wells is with 0.8 eV rather high compared to most of the III-V and II-VI quantum systems. Data on phonons and on intersubband transitions have been presented already in [4,5], partly at preceeding conferences of this series. The some holds for selected aspects of interband transitions [6,7], which show a dependence of the degree of polarization on the termination of the interfaces [2,8]. The influence of localization effects can be deduced e.g. from the non-monotonous dependence of the spectral position and of the FWHM of the emission on temperature. See e.g. [9,10] and for some other material combinations [11]. Here we concentrate on some selected aspects of the emission of CdS/ZnSe SQW in dependence of the CdS well thickness, on cw and pulsed excitation density and on doping.

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confidence: 86%

Density dependent luminescence properties of CdS/ZnSe single quantum wells

Priller

Schmidt

Dremel

et al. 2004

phys. stat. sol. (c)

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“…Such hole localization has been already suggested from the analysis of photoluminescence (PL) under high optical excitation conditions [7]. One of the possible mechanisms of the localization could be band bending at the ZnSe-BeTe interface which is presented in these structures as it follows from photoemission spectroscopy [8].…”

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confidence: 99%

Optical Anisotropy of ZnSe/BeTe Superlattices Probed by Excitonic Spectroscopy

et al. 1998

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“…In this work calculations for τ rel and τ rad were performed in the broad range of separated carrier density n (analogous to ones in [3,6]). …”

Section: Discussionmentioning

confidence: 99%

“…Deep localizing potentials for carriers in their ground states of ∼ 2.4 eV for electrons and ∼ 0.8 eV for holes lead to considerable life-time of separated carriers (≥ 100 ns) [1][2][3] that allows to achieve high separated carrier densities, up to n > 10 13 cm −2 .…”

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confidence: 99%

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Picosecond kinetics of the electron‐hole layers formation in wide‐bandgap II‐VI type‐II heterostructures

Filatov

Zaı̆tsev

Tartakovskii

et al. 2010

Phys. Status Solidi (c)

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Considerable slowdown of luminescence kinetics of the direct optical transition was discovered in ZnSe/BeTe type‐II heterostructures under high levels of optical pumping. The effect is attributed to forming of a potential barrier for holes in the ZnSe layer due to band bending at high densities of spatially separated carriers. That results in a longer time of the photoexcited holes energy relaxation to their ground state in the BeTe layer. The decrease of overlapping of electron and hole wavefunctions in the ZnSe layer in thick ZnSe/BeTe structures at high levels of optical excitation reveals an additional important effect, that leads to sufficient retardation of radiative recombination time for photoexcited carriers (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Giant blue shift of photoluminescence in strongly excited type-II ZnSe/BeTe superlattices

Cited by 28 publications

References 5 publications

Density dependent luminescence properties of CdS/ZnSe single quantum wells

Density dependent luminescence properties of CdS/ZnSe single quantum wells

Optical Anisotropy of ZnSe/BeTe Superlattices Probed by Excitonic Spectroscopy

Picosecond kinetics of the electron‐hole layers formation in wide‐bandgap II‐VI type‐II heterostructures

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