A tunable terahertz nanoantenna based on graphene is presented. The proposed antenna has a characteristic of dynamic frequency reconfiguration, high miniaturization, easy integration, low reflection coefficient, and good omnidirectional radiation pattern. The attractive properties of the graphene antenna has the potential to be used in nanoscale wireless communications and sensing systems. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1792–1794, 2014

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The development of metallic single electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions. These tunnel junctions should insure high tunnel current levels, low thermionic current, and low capacitance. The authors use atomic layer deposition to fabricate Al2O3 and HfO2 thin layers. Tunnel barrier engineering allows the achievement of low capacitance Al2O3 and HfO2 tunnel junctions using optimized annealing and plasma exposure conditions. Different stacks were designed and fabricated to increase the transparency of the tunnel junction while minimizing thermionic current. This tunnel junction is meant to be integrated in SET to enhance its electrical properties (e.g., operating temperature, ION/IOFF ratio).

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In this article, a 3D electro-optical simulation method is presented in order to estimate the Photon Detection Probability (PDP) of Single-Photon Avalanche Diodes (SPAD). The efficiency of the proposed simulation flow is demonstrated through a complete study aimed at improving the PDP of a SPAD implemented in 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) CMOS technology using a light-trapping approach (thanks to the patterning of Shallow Trench Insolation -STI layer). Simulation shows an increase of PDP spectrum of over 50% at wavelengths of 400-550nm and 750-1000nm and of 10-15% at the wavelengths of 550-750nm, compared to a reference SPAD without any nanostructuration.