3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for charged particle detection

Vignetti, Matteo; Calmon, Françis; Pittet, Patrick; Parès, G.; Cellier, Rémy; Quiquerez, L.; Albuquerque, T. Chaves de; Bechetoille, E.; Testa, É.; Lopez, Jeremy; Dauvergne, D.; Savoy-Navarro, A.

doi:10.1016/j.nima.2017.10.089

Cited by 5 publications

(8 citation statements)

References 10 publications

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“…Single-Photon Avalanche Diodes (SPAD) or Geigermode Avalanche Diodes have been a very active research topic for the last few years due to their relatively simple structure making them easy to be implemented in CMOS technologies and also due to their sub-nanosecond response time and high light sensitivity [1]. The SPAD devices are frequently used for several purposes: Time-Of-Flight (TOF) [2] for 3D imaging and LIDAR applications, charged particle detection for medical ad high energy physics applications [3], Fluorescence Lifetime Imaging Microscopy (FLIM) for biological applications [4]. SPAD devices have been implemented in 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) CMOS technology, which allows intrinsic 3D pixel [5] and indirect sensing of SPAD avalanche events [6].…”

Section: Introductionmentioning

confidence: 99%

3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology

Gao

Issartel

Orobtchouk

et al. 2021

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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In this article, a 3D electro-optical simulation method is presented in order to estimate the Photon Detection Probability (PDP) of Single-Photon Avalanche Diodes (SPAD). The efficiency of the proposed simulation flow is demonstrated through a complete study aimed at improving the PDP of a SPAD implemented in 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) CMOS technology using a light-trapping approach (thanks to the patterning of Shallow Trench Insolation -STI layer). Simulation shows an increase of PDP spectrum of over 50% at wavelengths of 400-550nm and 750-1000nm and of 10-15% at the wavelengths of 550-750nm, compared to a reference SPAD without any nanostructuration.

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Section: Introductionmentioning

confidence: 99%

3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology

Gao

Issartel

Orobtchouk

et al. 2021

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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“…The SPADs are not saturated by the DCR induced by the radiation damage thanks to their short dead time and high count rate. Moreover, as the ToF measurement is based on coincidence, even detectors reaching a DCR value of 1 × 10 5 counts per second will not affect their particle detection performance, as also shown in [18,19].…”

Section: Radiation Hardnessmentioning

confidence: 93%

“…in MIP detection is presented in [12]. First examples of such systems, detailed in [13][14][15], were following the concept proposed by [16].…”

Section: Introduction a High Timing Resolution With Silicon Pixel Det...mentioning

confidence: 99%

“…This noise, known as dark count rate (DCR), could limit the suitability of SPADs for the target application because of significant degradation of the measurement signal-to-noise ratio (SNR). However, as shown by [18,19], DCR can be drastically reduced by detecting MIPs with two SPADs operated in coincidence. Building on these elements, we present MIP time-of-flight (ToF) measurements resulting in unprecedented timing precision.…”

Section: Introduction a High Timing Resolution With Silicon Pixel Det...mentioning

confidence: 99%

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Sub-10 ps Minimum Ionizing Particle Detection with Geiger-Mode APDs

Gramuglia¹,

Ripiccini²,

Fenoglio³

et al. 2021

Preprint

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Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of stateof-the-art Geiger-mode APDs, also known as single-photon avalanche diodes (SPADs), for the detection of minimum ionizing particles (MIPs) with best-in-class timing resolution. The SPADs were implemented in standard CMOS technology and integrated with on-chip quenching and recharge circuitry. Two devices in coincidence allowed to measure the time-of-flight of 180 GeV/c momentum pions with a coincidence time resolution of 22 ps FWHM (9.5 ps Gaussian sigma). Radiation hardness measurements, also presented here, highlight the suitability of this family of devices for a wide range of high energy physics (HEP) applications.

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“…This noise, known as dark count rate (DCR), could limit the suitability of SPADs for the target application because of significant degradation of the measurement signal-to-noise ratio (SNR). However, as shown by [19,20], DCR can be drastically reduced by detecting MIPs with two SPADs operated in coincidence. Building on these elements, we present MIP time-of-flight (ToF) measurements resulting in unprecedented timing precision.…”

Section: High Timing Resolution With Silicon Pixel Detectorsmentioning

confidence: 99%

Sub-10 ps Minimum Ionizing Particle Detection With Geiger-Mode APDs

et al. 2022

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Major advances in silicon pixel detectors, with outstanding timing performance, have recently attracted significant attention in the community. In this work we present and discuss the use of state-of-the-art Geiger-mode APDs, also known as single-photon avalanche diodes (SPADs), for the detection of minimum ionizing particles (MIPs) with best-in-class timing resolution. The SPADs were implemented in standard CMOS technology and integrated with on-chip quenching and recharge circuitry. Two devices in coincidence allowed to measure the time-of-flight of 180 GeV/c momentum pions with a coincidence time resolution of 22 ps FWHM (9.4 ps Gaussian sigma). Radiation hardness measurements, also presented here, highlight the suitability of this family of devices for a wide range of high energy physics (HEP) applications.

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3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for charged particle detection

Cited by 5 publications

References 10 publications

3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology

3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology

Sub-10 ps Minimum Ionizing Particle Detection with Geiger-Mode APDs

Sub-10 ps Minimum Ionizing Particle Detection With Geiger-Mode APDs

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