Herein, we report on a newly developed and commercialized organic photo-curable Nanoimprint Lithography (NIL) resist, namely mr-NIL210. Since this new NIL resist follows an innovative design concept and contains solely specific monomers with a characteristic chemistry and molecular design, an extended longevity of applied polydimethyl siloxane (PDMS) stamps is enabled addressing a crucial key metric for industrial high-volume manufacturing processes. Moreover, the mr-NIL210 is characterized by a negligible oxygen sensitivity of the curing chemistry, outstanding film forming and adhesion performances as well as excellent plasma-based dry etch characteristics for various substrate materials like silicon, aluminum, sapphire, titanium, etc.
We report on our development strategy of photo-curable resists for nanoimprint lithography (NIL) based on modularity. Starting with a basic formulation, we address two topics: the integration of fluorinated additives and the enhancement of the dry etching stability. We prove both concepts by the introduction of two different resists derived from the same basic formulation. The viscosity of the novel resist materials was optimized for inkjet dispensing at room temperature (RT). The novel resist materials can be applied either in NIL batch processes or in high-throughput roller processes. Batch-wise imprints were performed on various substrates such as Si or plastics, demonstrating the distinctive application versatility of the novel materials. Dry etching of spincoated thin films on Si wafers was performed, demonstrating an etch stability versus Si of 3.5:1 by using the resist formulation with improved etching stability. Roll-to-roll NIL at high throughput on large areas was performed with web speeds of up to 30 mmin−1 with different stamp materials. We conclude that all resists reported herein can be deposited via inkjet dispensing at RT, are suitable for continuous high-throughput imprinting on flexible substrates, and are applicable in step-wise NIL processes with good etch resistance in dry etch processes
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