Effective light management is imperative in maintaining high efficiencies as photovoltaic devices become thinner. We demonstrate a simple and effective method of enhancing light trapping in solar cells with thin absorber layers by tuning localized surface plasmons in arrays of Ag nanoparticles. By redshifting the surface plasmon resonances by up to 200 nm, through the modification of the local dielectric environment of the particles, we can increase the optical absorption in an underlying Si wafer fivefold at a wavelength of 1100 nm and enhance the external quantum efficiency of thin Si solar cells by a factor of 2.3 at this wavelength where transmission losses are prevalent. Additionally, by locating the nanoparticles on the rear of the solar cells, we can avoid absorption losses below the resonance wavelength due to interference effects, while still allowing long wavelength light to be coupled into the cell. Results from numerical simulations support the experimental findings and show that the fraction of light backscattered into the cell by nanoparticles located on the rear is comparable to the forward scattering effects of particles on the front. Using nanoparticle self-assembly methods and dielectrics commonly used in photovoltaic fabrication this technology is relevant for application to large-scale photovoltaic devices.
The issue of hysteresis in perovskite solar cells has now been convincingly linked to the presence of mobile ions within the perovskite layer. Here we test the limits of the ionic theory by attempting to account for a number of exotic characterization results using a detailed numerical device model that incorporates ionic charge accumulation at the perovskite interfaces. Our experimental observations include a temporary enhancement in open-circuit voltage following prolonged periods of negative bias, dramatically S-shaped current-voltage sweeps, decreased current extraction following positive biasing or "inverted hysteresis", and non-monotonic transient behaviours in the dark and the light. Each one of these phenomena can be reproduced and ultimately explained by our models, providing further evidence for the ionic theory of hysteresis as well as valuable physical insight into the factors that coincide to bring these phenomena about. In particular we find that both interfacial recombination and carrier injection from the selective contacts are heavily affected by ionic accumulation, and are essential to explaining the non-monotonic voltage transients and S-shaped J-V curves. Inverted hysteresis is attributed to the occurrence of "positive" ionic accumulation, which may also be responsible for enhancing the stabilized open-circuit voltage in some perovskite cells.
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