This paper presents a review and summary of the PSMA "PSiP2PwrSoC" special project that investigated the technology and performance underpinning recent commercial developments in Power Supply in Package and Power Supply on Chip. The results of this study are based on the identification of more than 28 commercial products, six of which were analyzed in detail, both physically and electrically. The methodology of the project is described and some of the salient results of this benchmarking effort are presented. In this study, a representative subset of the available commercial products was selected and a comprehensive physical, electrical and thermal performance analysis was carried out. The objectives were to identify the components, materials and assembly technologies used, and to determine if the drive toward greater integration and higher power density affected the performance of newer devices. The results of the analysis were then used to determine the current state of the technology in this application space, to show how it has developed to date and to predict how it might progress in the future. These results are presented in a generic format that does not identify individual products. This project was co-sponsored by the PSMA and member companies. The final report of the project, which includes more detailed information on the reviews described here as well as considerable trending analysis, is now available.Index Terms-Power supply in package (PSiP), power supply on chip (PwrSoC).
Aluminum nitride (AlN) is a widely researched piezoelectric material due to its CMOS compatibility. One of the most common applications for AlN is in the area of vibrational energy harvesting. The piezoelectric quality of AlN is related to the crystal orientation of the film and optimal conditions are obtained when AlN is c-axis aligned with a (0 0 2) orientation. AlN can be a challenging material to integrate into a fabrication process due to orientation dependency of the fabrication process. This paper reports on the effects of non-(0 0 2) oriented AlN peaks on an energy harvesting MEMS cantilever structure. Results show that FWHM values of the AlN films from different wafers were approximately the same 8.5°, 8.7°, and 9°, however wafer 1 had additional peaks at (1 0 2) and (1 0 3), which significantly affected the piezoelectric constants and the amount of power generated. The measured d31 value for the wafers were 2.04, 1.97, and 0.84 pm V−1, and the power generated was 0.67, 0.64, and 0.24 µW respectively. These values show that non-peaks of AlN can cause a significant decrease in the piezoelectric constant, which causes significant decrease in the ability to generate power from an AlN film.
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