Surface ripple, as an important factor of corrugations in two-dimensional (2D) atomic crystals, plays important roles in determining their mechanical and physical properties. Here, we systematically investigated the strain-engineered rippling structure and manipulation of the rippling domain in monolayer WS2 flakes via atomic force microscopy (AFM). The rippling structure was introduced by the in-plane compression applied through the underlying SiO2/Si substrate during the rapid cooling process of post-growth. The zigzag-orientated rippling domains with three-equivalent directions were visualized by transverse shear microscopy (TSM) and friction force microscopy and further determined via angle-dependent TSM. Furthermore, these rippling domains can be precisely manipulated by controlling the AFM scanning, and various rippling patterns were formed by the AFM lithography. The manipulation mechanisms were phenomenally discussed based on their strain-induced anisotropic mechanical properties, the film–substrate mechanical model, and the dynamic strain-induced anisotropic puckering effects. Our study will be beneficial in understanding and controlling not only the rippling structures but also the rippling-related electronic and optical properties of 2D materials.
The strain has been employed for controlled modification of electronical and mechanical properties of two-dimensional (2D) materials. However, the thermal strain-engineered behaviors of the CVD-grown MoS 2 have not been systematically explored. Here, we investigated the strain-induced structure and properties of CVD-grown triangular MoS 2 flakes by several advanced atomic force microscopy. Two different kinds of flakes with sharp-corner or vein-like nanostructures are experimentally discovered due to the size-dependent strain behaviors. The critical size of these two kinds of flakes can be roughly estimated at∼17 μm. Within the small flakes, the sharp-corner regions show specific strain-modified properties due to the suffering of large tensile strain. While in the large MoS 2 flakes, the complicated vein-like nanoripple structures were formed due to the interface slipping process under the larger tensile strain. Our work not only demonstrates the size-specific strain behaviors of MoS 2 flakes but also sheds light on the artificial design and preparation of strain-engineered nanostructures for the devices based on the 2D materials.
Nanocontact properties of two-dimensional (2D) materials are closely dependent on their unique nanomechanical systems, such as the number of atomic layers and the supporting substrate. Here, we report a direct observation of toplayer-dependent crystallographic orientation imaging of 2D materials with the transverse shear microscopy (TSM). Three typical nanomechanical systems, MoS2 on the amorphous SiO2/Si, graphene on the amorphous SiO2/Si, and MoS2 on the crystallized Al2O3, have been investigated in detail. This experimental observation reveals that puckering behaviour mainly occurs on the top layer of 2D materials, which is attributed to its direct contact adhesion with the AFM tip. Furthermore, the result of crystallographic orientation imaging of MoS2/SiO2/Si and MoS2/Al2O3 indicated that the underlying crystalline substrates almost do not contribute to the puckering effect of 2D materials. Our work directly revealed the top layer dependent puckering properties of 2D material, and demonstrate the general applications of TSM in the bilayer 2D systems.
Group-V elemental nanofilms were predicted to exhibit interesting physical properties such as nontrivial topological properties due to their strong spin–orbit coupling, the quantum confinement, and surface effect. It was reported that the ultrathin Sb nanofilms can undergo a series of topological transitions as a function of the film thickness h: from a topological semimetal (h > 7.8 nm) to a topological insulator (7.8 nm > h > 2.7 nm), then a quantum spin Hall (QSH) phase (2.7 nm > h > 1.0 nm) and a topological trivial semiconductor (h > 1.0 nm). Here, we report a comprehensive investigation on the epitaxial growth of Sb nanofilms on highly oriented pyrolytic graphite (HOPG) substrate and the controllable thermal desorption to achieve their specific thickness. The morphology, thickness, atomic structure, and thermal-strain effect of the Sb nanofilms were characterized by a combination study of scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning tunneling microscopy (STM). The realization of Sb nanofilms with specific thickness paves the way for the further exploring their thickness-dependent topological phase transitions and exotic physical properties.
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