Epitaxial fabrication of topological Bi-Sb alloy films by surface alloying of Sb nanofilms

Xing, Shuya; Lei, Le; Dong, Haoyu; Guo, Jianfeng; Cao, Feiyue; Gu, Shangzhi; Geng, Yanyan; Mi, Shuo; Wu, Hao; Pang, Fei; Ji, Wei; Xu, Rui; Cheng, Zhihai

doi:10.1016/j.susc.2021.121921

Cited by 8 publications

(6 citation statements)

References 32 publications

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“…for more details). This is also consistent with the recent observation using STM in 5.5 nm-thick BiSb thin films, where the band gap of BiSb is found to be further increased to 490 meV due to the strong quantum confinement, and that the Fermi level is in the band gap, so that most of the current flows in the SSs of BiSb 47 . We will use this information later for the estimation of the ISHA of BiSb.…”

Section: Resultssupporting

confidence: 93%

“…This large SHA was also observed in non-epitaxial BiSb layers deposited by magnetron sputtering [35][36][37][38][39] , which means that poly-crystalline BiSb can also be used for spin detection by using its large SHA. Non-trivial topologically protected surface states of BiSb have been confirmed by angle-resolved photoemission spectroscopy (ARPES) [40][41][42] , quantum oscillations 43,44 , resistivity-temperature characteristics 45,46 , and very recently, scanning tunneling microscopy (STM) measurements 47 .…”

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confidence: 99%

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Room-temperature spin injection from a ferromagnetic semiconductor

Goel

Khang

Osada

et al. 2023

Sci Rep

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Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (TC) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS.

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Section: Resultssupporting

confidence: 93%

mentioning

confidence: 99%

Room-temperature spin injection from a ferromagnetic semiconductor

Goel

Khang

Osada

et al. 2023

Sci Rep

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show abstract

“…for more details). This is also consistent with the recent observation using STM in 5.5 nmthick BiSb thin films, where the band gap of BiSb is found to be further increased to 490 meV due to the strong quantum confinement, and that the Fermi level is in the band gap, so that most of the current flows in the SS states of BiSb 47 . We will use this information later for the estimation of the ISHA of BiSb.…”

Section: Room-temperature Spin Pumping and Spin-to-charge Conversionsupporting

confidence: 92%

“…This large SHA was also observed in non-epitaxial BiSb layers deposited by magnetron sputtering 35−39 , which means that poly-crystalline BiSb can also be used for spin detection by using its large SHA. Non-trivial topologically protected surface states of BiSb have been confirmed by angle-resolved photoemission spectroscopy (ARPES) 40 , 41 , 42 , quantum oscillations 43,44 , resistivity-temperature characteristics 45,46 , and very recently, scanning tunneling microscopy (STM) measurements 47 .…”

mentioning

confidence: 94%

Room-temperature spin injection from a ferromagnetic semiconductor

Goel

Khang

Anh

et al. 2023

Preprint

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Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a (Ga,Fe)Sb / BiSb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (TC) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS.

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“…Design of surface catalysts can benefit from surface phase-separated states for enhanced area-selective catalytic activity [2]. Moreover, certain metal/semi-metal surface alloys are topological insulators, where "the quantum confinement effect can suppress the bulk conduction channels and enhance the transport of the topological surface states" [3]. This property is valuable for design of future electronic and spintronic devices [4,5].…”

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confidence: 99%

Vacancy-mediated suppression of phase separation in a model two-dimensional surface alloy by the difference of the atomic jump rates

Khenner

2022

Preprint

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A vacancy-mediated collective diffusion model is used to compute a thermally-induced (spinodal) phase separation in a typical fcc bi-metallic surface alloy at low median concentration of vacancies, focusing on the effect of the ratio, Γ = ΓA/ΓB, of the jump rates to the vacant sites of the two types of atoms. The model is formulated for the diffusion of one atomic species and vacancies, employing the kinetic transport coefficients derived by Moleko et al. (Phil. Mag. A 59, 141 (1989)). It is demonstrated that for A0.7B0.3 alloy, Γ ∼ 50 results in suppression of phase separation, whereas very small Γ values result in mild phase separation (i.e., the suppression is incomplete).

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Epitaxial fabrication of topological Bi-Sb alloy films by surface alloying of Sb nanofilms

Cited by 8 publications

References 32 publications

Room-temperature spin injection from a ferromagnetic semiconductor

Room-temperature spin injection from a ferromagnetic semiconductor

Room-temperature spin injection from a ferromagnetic semiconductor

Vacancy-mediated suppression of phase separation in a model two-dimensional surface alloy by the difference of the atomic jump rates

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