Double perovskite Cs 2 AgInCl 6 is newly reported as a stable and environmentally friendly alternative to lead halide perovskites. However, the fundamental properties of this material remain unexplored. Here, we first produced high-quality Cs 2 AgInCl 6 single crystals (SCs) with a low trap density of 8.6 × 10 8 cm −3 , even lower than the value reported in the best lead halide perovskite SCs. Through systematical optical and electronic characterization, we experimentally verified the existence of the proposed parity-forbidden transition in Cs 2 AgInCl 6 and identified the role of oxygen in controlling its optical properties. Furthermore, sensitive (dectivity of ∼10 12 Jones), fast (3 dB bandwidth of 1035 Hz), and stable UV photodetectors were fabricated based on our Cs 2 AgInCl 6 SCs, showcasing their advantages for optoelectronic applications.

Metal oxide/graphene nanocomposites are emerging as one of the promising candidate materials for developing high-performance gas sensors. Here, we demonstrate sensitive room-temperature H 2 S gas sensors based on SnO 2 quantum wires that are anchored on reduced graphene oxide (rGO) nanosheets. Using a one-step colloidal synthesis strategy, the morphology-related quantum confinement of SnO 2 can be well-controlled by tuning the reaction time, because of the steric hindrance effect of rGO. The assynthesized SnO 2 quantum wire/rGO nanocomposites are spin-coated onto ceramics substrates without further sintering to construct chemiresistive gas sensors. The optimal sensor response toward 50 ppm of H 2 S is 33 in 2 s, and it is fully reversible upon H 2 S release at 22 °C. In addition to the excellent gas adsorption of ultrathin SnO 2 quantum wires, the superior sensing performance of SnO 2 quantum wire/rGO nanocomposites can be attributed to the enhanced electron transport resulting from the favorable charge transfer of SnO 2 /rGO interfaces and the superb transport capability of rGO. The easy fabrication and roomtemperature operation make our sensors highly attractive for ultrasensitive H 2 S gas detection with less power consumption.

The binary semiconductor of antimony selenide (Sb 2 Se 3 ) has received wide attention as potential solar cell absorber material recently due to its attractive optoelectronic properties such as proper bandgap (1.17 eV direct and 1.03 eV indirect), large absorption coefficient (>10 5 cm −1 ), decent carrier mobility (≈10 cm 2 V −1 s −1 ), and long carrier lifetime (≈60 ns) as well as its low toxicity, low cost, and earth-abundant constituents. [1] Based on the rapid thermal evaporation (RTE) deposition technology, power conversion efficiencies (PCE) were achieved in superstrate CdS-based Sb 2 Se 3 and Sb 2 (S x ,Se 1−x ) 3 thin film solar cells as 5.6% and 5.79%, [2] respectively. Simultaneously, the substrate Sb 2 Se 3 solar cells with CdS buffer layer were also rapidly developed with PCE over 4% reported by several groups. [3] The traditional CdS buffer layer is toxic to human and environment, and the device reveals low

Antimony sulfide (Sb2S3) as a wide‐bandgap, nontoxic, and stable photovoltaic material reveals great potential for the uppermost cells in Si‐based tandem cell stacks. Sb2S3 solar cells with a compatible process, acceptable cost, and high efficiency therefore become the mandatory prerequisites to match silicon bottom cells. The performance of vacuum processed Sb2S3 device is pinned by bulk and interfacial recombination. Herein, a thermally treated TiO2 buffer layer induces quasiepitaxial growth of vertical orientation Sb2S3 absorber overcoming interface defects and absorber transport loss. Such novel growth could pronouncedly improve the open‐circuit voltage (Voc) due to the superior interface quality and intraribbon transport. The epitaxial rough Sb2S3 surface shows a texturized‐like morphology. It is optimized by tuning the grain sizes to form strong light trapping effect, which further enhances the short‐circuit current density (Jsc) with a 16% improvement. The final optimal device with high stability obtains a power conversion efficiency of 5.4%, which is the best efficiency for full‐inorganic Sb2S3 solar cells. The present developed quasiepitaxy strategy supports a superior interface, vertical orientation, and surface light trapping effect, which provides a new perspective for efficient noncubic material thin film solar cells.

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We experimentally demonstrate electrical tuning of plasmonic mid-infrared absorber resonances at 4 lm wavelength. The perfect infrared absorption is realized by an array of gold nanostrip antennas separated from a back reflector by a thin dielectric layer. An indium tin oxide active layer strongly coupled to the optical near field of the plasmonic absorber allows for spectral tunability. V

Long-term stable and high-resolution structural colors, can be designed as functional devices.-Structural colors have application prospects in many fields, such as high-resolution printing and anti-counterfeiting.