Accelerated Optimization of TiO2/Sb2Se3 Thin Film Solar Cells by High‐Throughput Combinatorial Approach

Chen, Chao; Zhao, Yang; Lu, Shuaicheng; Li, Kanghua; Yang, Li; Ye, Bo; Chen, Wenhao; Wang, Liang; Li, Deng‐Bing; Deng, Hui; Yi, Fei; Tang, Jiang

doi:10.1002/aenm.201700866

Cited by 130 publications

(106 citation statements)

References 30 publications

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“…X-ray photoemission spectroscopy (XPS) analysis showed reduction in Se levels at the surface following the etch treatment. Similarly, Chen et al reported in 2017 that the use of an ammonium sulphide ((NH 4 ) 2 S) chemical etch was effective in removing both Sb 2 O 3 and Se contamination (also supported by XPS analysis) and that this led to an increase in FF [14]. The XPS interpretation, however, was not consistent across the two studies (despite coming from the same group), there being a large discrepancy in the assigned positions of the chemically shifted contaminant peaks (refer to section 4 for details).…”

Section: Introductionmentioning

confidence: 84%

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Chemical etching of Sb₂Se₃ solar cells: surface chemistry and back contact behaviour

et al. 2019

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The effect of (NH 4 ) 2 S and CS 2 chemical etches on surface chemistry and contacting in Sb 2 Se 3 solar cells was investigated via a combination of x-ray photoemission spectroscopy (XPS) and photovoltaic device analysis. Thin film solar cells were produced in superstrate configuration with an absorber layer deposited by close space sublimation. Devices of up to 5.7% efficiency were compared via currentvoltage measurements (J-V ) and temperature-dependent current-voltage (J-V-T) analysis. XPS analysis demonstrated that both etching processes were successful in removing Sb 2 O 3 contamination, while there was no decrease in free elemental selenium content by either etch, in contrast to prior work. Using J-V-T analysis the removal of Sb 2 O 3 at the back surface in etched samples was found to improve contacting by reducing the potential barrier at the back contact from 0.43 eV to 0.26 eV and lowering the series resistance. However, J-V data showed that due to the decrease in shunt resistance and short-circuit current as a result of etching, the devices show a lower efficiency following both etches, despite a lowering of the series resistance. Further optimisation of the etching process yielded an improved efficiency of 6.6%. This work elucidates the role of surface treatments in Sb 2 Se 3 devices and resolves inconsistencies in previously published works.

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Section: Introductionmentioning

confidence: 84%

“…As a result there are many aspects of material and device behaviour that are still poorly understood, such as front and back contacting. Sb 2 O 3 and free elemental selenium contaminants have been identified at the surface of Sb 2 Se 3 films [13,14], however the impact of this on device behaviour has not yet been properly investigated.…”

Section: Introductionmentioning

confidence: 99%

Chemical etching of Sb₂Se₃ solar cells: surface chemistry and back contact behaviour

et al. 2019

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“…Therefore, by comparing the difference between N C-V (defect density calculated from C-V measurement) and N DLCP (defect density calculated from DLCP measurement) one can estimate interfacial defect density. [18,19] Hence, we can distinguish the defect density at the SnO 2 /Sb 2 Se 3 interface by comparing the difference between N C-V (defect density calculated from C-V measurement) and N DLCP (defect density calculated from DLCP measurement). As shown in Figure 5c-e, the device with SnO 2 annealed at 480 °C possesses almost overlapped N C-V and N DLCP curves meaning the lowest interfacial defects density among the four devices.…”

Section: Resultsmentioning

confidence: 99%

Sb₂Se₃ Thin‐Film Photovoltaics Using Aqueous Solution Sprayed SnO₂ as the Buffer Layer

Zhao

Chen

et al. 2017

Adv Elect Materials

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Sb2Se3 is a promising photovoltaic material due to its suitable bandgap, strong light absorption, simple phase, nontoxicity, and earth‐abundant constituents. Currently, most Sb2Se3 thin‐film solar cells are based on toxic CdS as the buffer layer. Here, for the first time, non‐toxic, wide‐bandgap, and chemically stable SnO2 is introduced as the buffer layer instead of CdS to build superstrate SnO2/Sb2Se3 thin‐film solar cells. The phase of sprayed SnO2 films and device band alignment are investigated in detail. SnO2 buffer layer annealed at 480 °C exhibits the lowest interfacial defect density and best device performance. Finally, 3.05% efficiency is achieved and the devices show excellent storage and light‐soaking stability. This preliminary experimental study implies that SnO2 has potential for developing high‐efficiency, stable, and environmentally friendly Sb2Se3‐based solar cells.

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confidence: 99%

Over 6% Certified Sb₂(S,Se)₃ Solar Cells Fabricated via In Situ Hydrothermal Growth and Postselenization

Wang

Chen

et al. 2018

Adv Elect Materials

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eV), [1][2][3] remarkable absorption coefficient (≈10 5 cm −1 ), [4,5] excellent stability, and low-toxicity component. To promote the power conversion efficiency, many methods have been successfully applied to fabricate Sb 2 (S x ,Se 1-x ) 3 solar cells. For example, the rapid thermal evaporation (RTE) method [6] have been gathered many attentions for the fabrication of Sb 2 Se 3 solar cells. Recently, Tang and co-workers used a novel vapor transport deposition (VTD) way to refresh the recorded efficiency of Sb 2 Se 3 solar cell to 7.6%, [7] which has been made a great progress since Sb 2 Se 3 was successfully achieved a power conversion efficiency (PCE) of 0.03% in 2002. [8] On the other hand, Choi et al. have achieved a PCE of 7.5% [9] for Sb 2 S 3 by chemical bath deposition (CBD). Although the VTD and CBD methods have achieved impressive efficiency over 7%, a number of processing issues arise in these approaches. For example, VTD deposition processes are complex and expensive. While the nonvacuums CBD method also has weaknesses such as (i) the film prepared from CBD method is tend to be amorphous; [8,10] (ii) the Sb 2 S 3 film prepared by CBD method is antimony rich which results in a higher mean coordination number (MCN) than the stoichiometric Sb 2 S 3 . It will make it too rigid to flatten out after the annealing step; [11] (iii) the Sb 2 S 3 film prepared by CBD method inevitably includes impurities such as SbOCl, Sb 2 O 3 , and Sb 2 (SO 3 ) 3 . [12][13][14] Meanwhile, although the crystalline of the film fabricated by RTE or VTD is promising, the compactness of the absorber needs a further improvement. Thus, seeking for an effective and easy-handle nonvacuum approach to improve Sb 2 (S x ,Se 1-x ) 3 thin film solar cells is urgently needed.Since the hydrothermal method is a useful method in thin film preparation, the quality and homogeneity of the film deposited by this method is remarkable, which is expected to be able to solve the problem mentioned above and cut down the cost of fabrication. Liu et al. have taken this method to prepare the Sb 2 S 3 thin films, but there is no device reported. [15] In our previous work, double buffer layer was used to tune the band align and reduce recombination, which has achieved V oc as high as 792 mV based on hydrothermal derived Sb 2 (S x ,Se 1-x ) 3 solar cell. [16] But the thick buffer layer (60 nm TiO 2 + 60 nm CdS) inevitably increases the R s of device and decreases the transmittance as well, both of which will reduce J sc and PCE. Besides, the formation mechanism for Sb 2 S 3 thin films based Antimony sulfide-selenide Sb 2 (S,Se) 3 as a promising absorber material has drawn extensive attention owing to its rewarding photoelectric properties, low toxicity, and earth abundant components. Here, an available and highly effective method, in situ hydrothermal growth accompanied with postselenization, is successfully applied to fabricate Sb 2 (S,Se) 3 solar cells. The rationale for the preparation of Sb 2 S 3 precursors by the hydrothermal method is discussed, and ...

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Accelerated Optimization of TiO₂/Sb₂Se₃ Thin Film Solar Cells by High‐Throughput Combinatorial Approach

Cited by 130 publications

References 30 publications

Chemical etching of Sb₂Se₃ solar cells: surface chemistry and back contact behaviour

Chemical etching of Sb₂Se₃ solar cells: surface chemistry and back contact behaviour

Sb₂Se₃ Thin‐Film Photovoltaics Using Aqueous Solution Sprayed SnO₂ as the Buffer Layer

Over 6% Certified Sb₂(S,Se)₃ Solar Cells Fabricated via In Situ Hydrothermal Growth and Postselenization

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Accelerated Optimization of TiO2/Sb2Se3 Thin Film Solar Cells by High‐Throughput Combinatorial Approach

Cited by 130 publications

References 30 publications

Chemical etching of Sb2Se3 solar cells: surface chemistry and back contact behaviour

Chemical etching of Sb2Se3 solar cells: surface chemistry and back contact behaviour

Sb2Se3 Thin‐Film Photovoltaics Using Aqueous Solution Sprayed SnO2 as the Buffer Layer

Over 6% Certified Sb2(S,Se)3 Solar Cells Fabricated via In Situ Hydrothermal Growth and Postselenization

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Resources

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Accelerated Optimization of TiO₂/Sb₂Se₃ Thin Film Solar Cells by High‐Throughput Combinatorial Approach

Chemical etching of Sb₂Se₃ solar cells: surface chemistry and back contact behaviour

Chemical etching of Sb₂Se₃ solar cells: surface chemistry and back contact behaviour

Sb₂Se₃ Thin‐Film Photovoltaics Using Aqueous Solution Sprayed SnO₂ as the Buffer Layer

Over 6% Certified Sb₂(S,Se)₃ Solar Cells Fabricated via In Situ Hydrothermal Growth and Postselenization