Abstract:In this research work, the electrical and thermal properties of Graphene field effect transistor (GFET) has been simulated by varying the width of graphene channel. Here, the electrical characteristics, like electron density, hole density, I-V Characteristics and charge carrier velocity profile in the channel region has been studied for three different values of graphene channel width-1 nm, 2 nm and 3 nm. To analyze the thermal properties of the GFET device, the temperature profile of the graphene channel has been simulated for 1, 2 and 3 nm channel width. After analyzing the simulation of this characteristics, it is concluded that, both electrical and thermal properties of GFET can be improved by fabricating the channel with larger width in the GFET device.
Abstract:Two dimensional electron gas (2DEG) based High Electron Mobility Transistor (HEMT) has been considered as the basic structure of the THz modulator, where three different metals, namely Ni, Zn and Al of 1 nm thickness, have been considered as the gate material of the HEMT. For graphene gated 2DEG based THz Modulator, 1 nm width of graphene layer and different 2DEG materials are considered for simulation. Electronically tuniable conductivity of the graphene gate is simulated in the range of -50 V to 50 V. Then beam attenuation of the metal-gated THz modulator is studied and its effect on the modulation depth is simulated. After that, intensity transmittance of the both metal and graphene gated THz modulator is simulated as a function of the metal and 2DEG sheet conductivity. Finally, the modulation depth of both metal and graphene gated THz modulator has been studied in terms of the conductivity of 2DEG sheet and graphene gate respectively. After analyzing these studies, graphene based THz modulator has been recommended as a suitable and efficient modulator for the modulation of incident THz radiation for its higher modulation depth than the metal gated modulators, and suggested to be very useful for long distance communication purpose.
In this research work, the performance parameters , such as fill factor (FF), external offquantum efficiency (EQE) , maximum power density and photon absorption profile of a planar hetero-junction poly 3-hexyl thiophene (P3HT) / phenyl-C61-butyric acid methyl ester (PCBM) photovoltaic cell has been simulated for different values of exciton diffusion length and thickness of donor layer where the simulation has been performed under the consideration of incident solar radiation of 1 kW/m2 irradiance , Air mass of 1.5, ambient temperature of 300K and Indium Tin Oxide (ITO) and Aluminium (Al) has been considered as the anode and cathode of the P3HT/PCBM solar cell respectively. The performance parameters and photon absorption profile of the P3HT/PCBM organic solar cell has been simulated for donor and acceptor layer thickness of 50, 60 and 70 nm and exciton diffusion length of 10, 15 and 20 nm . Finally, highest External Quantum Efficiency of 2.41% and Maximum Power Density of 24.10 W/m2 has been obtained for exciton diffusion length of 20 nm and donor thickness of 50 nm .
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