Waste dumping is one of the major causes of environment pollution in Bangladesh. This study was designed to assess the impact on health of children working in one of the garbage dumping sites in Dhaka. Blood samples were collected from exposed (n = 20, aged: 8-15 years, exposed to dumped garbage from 6 months to 6 years) and control subjects (n = 15, age matched and never worked in the garbage dumping site). Oxidative stress markers like lipid hydroperoxides, thiobarbituric acid reactive substances and protein carbonyl content were measured. Alkaline comet assay was performed to assess the possible damage in DNA. To check the consequences of possible toxic exposure, we performed liver function tests of the study subjects. Oxidative stress-mediated damage of macromolecules was found to be significantly increased in the exposed children. Liver function tests were found normal. Thus, the children working in garbage dumping site are in severe health risk.

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Enhancement of switching in nanoelectronics, Carbon Nano Tube (CNT) could be utilized in nanoscaled Metal Oxide Semiconductor Field Effect Transistor (MOSFET). In this review, we present an in depth discussion of performances Carbon Nanotube Field Effect Transistor (CNTFET) and its significance in nanoelectronic circuitry in comparison with Metal Oxide Semiconductor Field Effect Transistor (MOSFET). At first, we have discussed the structural unit of Carbon Nanotube and characteristic electrical behaviors beteween CNTFET and MOSFET. Short channel effect and effects of scattering and electric field on mobility of CNTFET and MOSFET have also been discussed. Besides, the nature of ballistic transport and profound impact of gate capacitance along with dielectric constant on transconductance have also have been overviewed. Electron ballistic transport would be the key in short channel regime for high speed switching devices. Finally, a comparative study on the characteristics of contact resistance over switching capacity between CNTFET and MOSFET has been addressed.

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Abstract:In this research work, the electrical and thermal properties of Graphene field effect transistor (GFET) has been simulated by varying the width of graphene channel. Here, the electrical characteristics, like electron density, hole density, I-V Characteristics and charge carrier velocity profile in the channel region has been studied for three different values of graphene channel width-1 nm, 2 nm and 3 nm. To analyze the thermal properties of the GFET device, the temperature profile of the graphene channel has been simulated for 1, 2 and 3 nm channel width. After analyzing the simulation of this characteristics, it is concluded that, both electrical and thermal properties of GFET can be improved by fabricating the channel with larger width in the GFET device.

In this review, we compare the distinct properties of Carbon Nanotube Field Effect Transistor (CNTFET) based applications with MOSFET based applications in memory and digital electronics technology. In nanoelectronics circuitry, CNTFET has opened new dimensions with extreme opportunities of improvement in circuit performance due to its extreme mobility, ballistic conduction and so forth. Apart from being an excellent conductor, CNTFET can also be used as a memory unit for its good stability in storing a data bit and as digital circuits (multi-valued logic gates) for its better PDP and sensitivity. This paper discusses the design and read-write mechanisms of 6T and 8T CNTFET SRAM cell and a comparative study among themselves based on their corresponding advantages and disadvantages. Moreover, superiority of CNTFET SRAM over MOSFET SRAM is analyzed in terms of

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