In an attempt to develop a low‐k interlayer dielectric, adamantane‐diphenyldiethynyl moiety containing oligomer is prepared. Oligomerization of 1,3,5,7‐tetrakis[3/4‐ethynylphenyl]adamantane (4) is accomplished by a Glaser–Hay oxidative coupling with 1,3,5‐triethynylbenzene and phenylacetylene end‐capping agent. The CHCl3 soluble oligomer is then thermally treated by step‐curing at 200, 300, 380, and 450 °C for 30 min at each temperature under nitrogen flow to render a shiny void‐free black polymer. TGA analysis indicates that the polymer is stable under nitrogen up to 500 °C with a marginal decomposition up to 800 °C. Solid‐state 13C NMR, Raman scattering, and FTIR are used to characterize the structure of the polymer. The polymer consists of amorphous carbon networks with the adamantane moieties and nanosized graphitic regions (clusters), which are generated from the thermal crosslinking of the diphenyldiethynyl units. It shows a remarkably low linear coefficient of thermal expansion (∼25 ppm/°C), presumably due to the presence of the disordered graphitic structure. Its high density (∼1.21 g/cm3), refractive index (∼1.80 at 632 nm), and Young's modulus (∼17.0 GPa) are also consistent with the interpretation. This study reveals important details about the effect of microscopic structure on the macroscopic properties of the highly crosslinked polymer. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 6909–6925, 2006
A spin-on sacrificial 193 nm UV absorbing organosiloxane film was developed to facilitate ArF photoresist (PR) patterning. To improve lithographic compatibility with acrylate based photoresists, different performance additives were evaluated as photoresist adhesion promoter. The results suggested that the type and loading of the photoresist adhesion promoter had a large impact on the profile and focus latitude of the patterned photoresist features. An efficient photoresist adhesion promoter candidate was identified, which has minimum impact on other solution and film properties. This work has led to the development of DUO TM 193 organosiloxane based bottom anti-reflective coating. Application of this film as a blanket level bottom anti-reflective coating or as a fill material for via first trench last (VFTL) dual damascene patterning is possible. The SiO structure intrinsic to this film provides a high degree of plasma etch selectivity to the thin ArF photoresists in use today. Furthermore, an equivalent plasma etch rate between DUO TM 193 and the low dielectric constant SiOCH films used as the dielectric layer in the backend Cu interconnect structure is possible without compromising the photoresist etch selectivity. Equivalent etch rate is necessary for complete elimination of the "fencing" or "shell" defects found at the base of the etched trench feature located at the perimeter of the top of the via. Advanced ArF PR features of 100 nm in width (and smaller) have been routinely patterned on DUO TM 193 film. Via fill, plasma etch rate, wet etch rate, ArF PR patterning and shelf life data will be discussed in this presentation.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.