Articles you may be interested inNumerical investigation via three-dimensional Monte Carlo modeling of sputtering and deposition processes in a direct current unbalanced magnetron discharge Low temperature, fast deposition of metallic titanium nitride films using plasma activated reactive evaporation J. Vac. Sci. Technol. A 23, 394 (2005); 10.1116/1.1874152 Structure and mechanical properties of Ti-Si-N films deposited by combined DC/RF reactive unbalanced magnetron sputtering Deposition and properties of yttriastabilized zirconia thin films using reactive direct current magnetron sputtering
Low‐temperature deposited titanium nitride layers exhibiting increased and distorted lattices are subjected to in situ X‐ray diffraction investigations at different temperatures. Annealing at about 450 °C leads to a complete lattice relaxation due to diffusion of point defects in the lattice. The activation energy for this diffusion can be calculated to be 1.23 ± 0.07 eV (while the reported activation energy of vacancy diffusion in TiN films is 2.09 eV). This proves that lattice widening and distortion in titanium nitride films deposited by dc magnetron sputtering at temperatures below 200 °C is mainly due to atoms on interstitial sites, and that the density of vacancies is high enough that most of the interstitial atoms find a vacancy to recombine, which leads to the observed relaxation.
Chromium layers have been deposited by three PVD techniquesvacuum arc evaporation, vacuum evaporation, and dc magnetron sputteringat substrate temperatures up to 500°C. The samples have been subjected to stress detection by analysis of the stress-induced sample bending, some of them by X-ray stress analysis, too. The subject of the investigations is the explanation of the dependence of the intrinsic film stress on the substrate temperature for each method, and a comparison of the obtained results. The most important difference between the deposition techniques is the average energy of the layer forming species. It is shown that there is a clear correspondence between these energies and the difference in the stress evolution in dependence on the substrate temperature for the different deposition techniques.
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