Structure and properties of titanium nitride thin films deposited at low temperatures using direct current magnetron sputtering

Abstract

Articles you may be interested inNumerical investigation via three-dimensional Monte Carlo modeling of sputtering and deposition processes in a direct current unbalanced magnetron discharge Low temperature, fast deposition of metallic titanium nitride films using plasma activated reactive evaporation J. Vac. Sci. Technol. A 23, 394 (2005); 10.1116/1.1874152 Structure and mechanical properties of Ti-Si-N films deposited by combined DC/RF reactive unbalanced magnetron sputtering Deposition and properties of yttriastabilized zirconia thin films using reactive direct current magnetron sputtering

Epitaxial growth of TiN films by N-implantation into evaporated Ti films

“…[1][2][3][4][5] These studies have suggested that epitaxial TiN films have superior effectiveness as corrosion-resistant coatings and diffusion barriers to that of polycrystalline TiN films. 1 Thus, properties of polycrystalline TiN have been studied in connection with the atomic concentration ratio ͑N/Ti͒ and microstructures in many previous papers.…”

Titanium nitride coated tungsten cold field emission sources

“…This class of materials is interesting because they have conductivities ͑thermal and electrical͒ comparable to those of the transition metals while their hardness, inertness, and high melting points are more typical of covalently bonded materials. High quality films are easily deposited using dc or rf reactive magnetron sputtering systems [9][10][11][12][13] and might be used for coating Mo or Si emitter arrays 1 to improve their performance, or for forming emitter arrays directly ͑e.g., via a Spindt type process 14 ͒. [4][5][6][7] For vacuum microelectronics applications, however, emitter fabrication schemes compatible with current thin film processes are required.…”

Origin of intrinsic stress in Y2O3 films deposited by reactive sputtering

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] This phenomenon is explained by atomic peening in which highenergy particles are reflected at the target and bombard the growing films. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] This phenomenon is explained by atomic peening in which highenergy particles are reflected at the target and bombard the growing films.…”