Camera-based thermoreflectance microscopy is a unique tool for high spatial resolution thermal imaging of working integrated circuits. However, a calibration is necessary to obtain quantitative temperatures on the complex surface of integrated circuits. The spatial and temperature resolutions reached by thermoreflectance are excellent (360 nm and 2.5 × 10−2 K in 1 min here), but the precision is more difficult to assess, notably due to the lack of comparable thermal techniques at submicron scales. We propose here a Peltier element control of the whole package temperature in order to obtain calibration coefficients simultaneously on several materials visible on the surface of the circuit. Under high magnifications, movements associated with thermal expansion are corrected using a piezo electric displacement and a software image shift. This calibration method has been validated by comparison with temperatures measured using integrated thermistors and diodes and by a finite volume simulation. We show that thermoreflectance measurements agree within a precision of ±2.3% with the on-chip sensors measurements. The diode temperature is found to underestimate the actual temperature of the active area by almost 70% due to the thermal contact of the diode with the substrate, acting as a heat sink.

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Nb3Sn platelets with thicknesses between 0.12 and 0.20 mm produced by a high isostatic pressure process at 1250 °C were irradiated at 300 K with 12 MeV protons. The effects of irradiation on the lattice parameter a, the atomic order parameter S and the transition temperature Tc were measured as a function of proton fluence. In view of the presence of multiple energy radiation sources in future accelerators, the present proton data are compared with neutron irradiation data from the literature. The fluences for both types of radiation were replaced by the dpa number, the ‘displacements per atom’, calculated using the FLUKA code, which is proportional to the number of radiation induced Frenkel defects. It was found that the variation of both a and S for Nb3Sn after proton and neutron irradiation as a function of dpa fall almost on the same curve, in analogy to the recently reported correlation between Tc and the dpa number. By a simultaneous irradiation of two adjacent thin Nb3Sn platelets, we have shown that this correlation is not only valid for the state of ‘steady energy loss’ (protons traveling through the first platelet) but also for the state of higher damage at the Bragg peak (second platelet). It follows that the number of radiation induced Frenkel defects in the A15 grains, calculated via the dpa number, can be considered as a ‘universal’ parameter, allowing the calculation of the variation of Tc, a and S of Nb3Sn under the effect of multiple high energy radiation sources, as in future superconducting accelerators.

The n_TOF spallation neutron facility is operating at CERN since 2001. Neutrons are produced with a very wide energy range, from thermal up to 1 GeV and with a very high instantaneous flux (105n/cm2/pulse at 200 m from target) thanks to the high intensity (7 × 1012 protons/pulse) and low repetition rate of the Proton Synchrotron (PS) which is delivering protons to a lead spallation target. The experimental area is located at 200 m from the target, resulting in a very good energy resolution and beam quality thanks to the adoption of an optimal collimation system. At the end of 2008 the n_TOF facility has resumed operation after a halt of 3 years due to technical issues. This contribution will outline the main physics results obtained by the facility since its inception in 1999, and show the importance of the measured nuclear data in the field of Nuclear Astrophysics and Nuclear Technology. Then it will present the future perspectives of the facility, aiming mainly in the direction of measuring highly radioactive samples, for which the facility has unique capabilities, with a lower background

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