We report the first successful room-temperature cw operations of a Ga0.25 In0.75 As0.5 P0.5 -InP buried ridge structure laser emitting at 1.3 μm grown by two-step low-pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 mW with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 mA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (ΔI/I≤5%).
We show here, for the first time, that disordering (alloy mixing) on group III sublattice of GaAlAs-GaAs quantum well (QW) structures can be accomplished by the introduction of a group V site substitutional donor impurity. This is achieved by performing donor sulfur diffusions at 850 °C (for varied durations 1 to 14 h) under open-tube conditions in molecular beam epitaxy as well as metalorganic chemical vapor deposition grown GaAlAs-GaAs QW structures. Using simple photoluminescence measurements at room temperature, we provide relevant evidence that the degree of alloy mixing (and so the resulting Al composition) is dependent on the diffused S concentration.
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