This article emphasizes a confinement model for electrons and ions in an ECR source for multicharged ions, on the basis of specific measurements performed on the 16.6 GHz MINIMAFIOS and 10 GHz CAPRICE facilities. The conclusions partially support the above model.
Hydrogenation of silicon materials has great advantages for its photovoltaic properties and is the key to elimination of crystalline defects during basaltic growth of the crystal. It is therefore interesting to characterize the plasma by optical emission spectroscopy methods in order to study hydrogenation of silicon particles during their treatment by an inductive thermal plasma burning in the Ar–H2 mixture.Excited states of atomic hydrogen n′ = 3–8, which are responsible for silicon hydrogenation, have been detected by the optical emission spectroscopy of the Balmer series lines. These hydrogen lines have been used to determine electronic density on the plasma axis. Furthermore, Ar I lines were used to estimate the electronic temperature by the Boltzmann plot method. The deviation from the local thermodynamic equilibrium of the plasma has also been estimated.
The Quadrumafios electron cyclotron resonance ion source (ECRIS) has been especially designed to permit physical studies of the plasma; this paper describes the source itself (which has been operated at 10 GHz in a first step), its preliminary performances, and the different diagnostics involved, which mainly concern the electron population (ECE, x rays, diamagnetism, microwave interferometer, and electron analyzer). The results are presented and discussed: There is of course a close relationship between the parameters of the plasma and the performances of the source; this point will be discussed in the article.
The 1.2 T–14.5 GHz ECR Caprice source is an upgrade version of previous Caprice sources where the three main ingredients of an ECR ion source of multicharged ions have been optimized: (i) the magnetic configuration has higher axial fields (1.4–1.45 T at the mirror throats) and radial field (1.05 T at the wall inside the plasma chamber) as well as higher mirror ratios, (ii) the 14.5 GHz rf frequency is convenient to higher magnetic fields, and (iii) more efficient electron sources allow the electron density to reach higher values, and thus high extracted ion currents (both first stage and wall coating). Emphasis is given to the metallic elements, the source is able to produce 10 eμA of Ca14+, 3 eμA of Fe17+ and Ni20+, 1 eμA of U37+, while being able to deliver 1130 eμA of O6+, 190 eμA of O7+, and 100 eμA of Ar12+.
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