Chaos presents a striking and fascinating phenomenon of nonlinear systems. A common aspect of such systems is the presence of feedback that couples the output signal partially back to the input. Feedback coupling can be well controlled in optoelectronic devices such as conventional semiconductor lasers that provide bench-top platforms for the study of chaotic behaviour and high bit rate random number generation. Here we experimentally demonstrate that chaos can be observed for quantum-dot microlasers operating close to the quantum limit at nW output powers. Applying self-feedback to a quantum-dot microlaser results in a dramatic change in the photon statistics wherein strong, super-thermal photon bunching is indicative of random-intensity fluctuations associated with the spiked emission of light. our experiments reveal that gain competition of few quantum dots in the active layer enhances the influence of self-feedback and will open up new avenues for the study of chaos in quantum systems.

Controlled non-local energy and coherence transfer enables light harvesting in photosynthesis and non-local logical operations in quantum computing. This process is intuitively pictured by a pair of mechanical oscillators, coupled by a spring, allowing for a reversible exchange of excitation. On a microscopic level, the most relevant mechanism of coherent coupling of distant quantum bits—like trapped ions, superconducting qubits or excitons confined in semiconductor quantum dots—is coupling via the electromagnetic field. Here we demonstrate the controlled coherent coupling of spatially separated quantum dots via the photon mode of a solid state microresonator using the strong exciton–photon coupling regime. This is enabled by two-dimensional spectroscopy of the sample’s coherent response, a sensitive probe of the coherent coupling. The results are quantitatively understood in a rigorous description of the cavity-mediated coupling of the quantum dot excitons. This mechanism can be used, for instance in photonic crystal cavity networks, to enable a long-range, non-local coherent coupling.

We investigate correlations between orthogonally polarized cavity modes of a bimodal micropillar laser with a single layer of self-assembled quantum dots in the active region. While one emission mode of the microlaser demonstrates a characteristic S-shaped input-output curve, the output intensity of the second mode saturates and even decreases with increasing injection current above threshold. Measuring the photon autocorrelation function g (2) (τ ) of the light emission confirms the onset of lasing in the first mode with g (2) (0) approaching unity above threshold. In contrast, strong photon bunching associated with superthermal values of g (2) (0) is detected for the other mode for currents above threshold. This behavior is attributed to gain competition of the two modes induced by the common gain material, which is confirmed by photon cross-correlation measurements revealing a clear anticorrelation between emission events of the two modes. The experimental studies are in qualitative agreement with theoretical studies based on a microscopic semiconductor theory, which we extend to the case of two modes interacting with the common gain medium. Moreover, we treat the problem by a phenomenological birth-death model extended to two interacting modes, which reveals that the photon probability distribution of each mode has a double-peak structure, indicating switching behavior of the modes for pump rates around threshold.

A novel concept for on-chip quantum optics using an internal electrically pumped microlaser is presented. The microlaser resonantly excites a quantum dot microcavity system operating in the weak coupling regime of cavity quantum electrodynamics. This work presents the first on-chip application of quantum dot microlasers, and also opens up new avenues for the integration of individual microcavity structures into larger photonic networks.

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength ͑OS͒ and the quantum efficiency ͑QE͒ of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot ͑SCQD͒ samples with varying thickness of the capping layer. We determine radiative and nonradiative decay rates, from which we calculate an OS of 10.1Ϯ 2.6 and an encouragingly high QE of ͑47Ϯ 14͒% for the SCQDs. The nonideal QE is attributed to nonradiative recombination at the etched nanohole interface.