FRANK ANTHONY DOLJACK The intrinsic stress in thin, polycrystalline nickel films vapor deposited onto polished silicon substrates was measured by viewing the substrate deflection using an optical interference method. The method measured the force per unit width as a function of film thickness during film growth in high vacuum. The derivative of the force per unit width curve gave the instantaneous stress as a function of film thickness. Runs were made at controlled substrate temperatures between-420 C and 225' C by using a clamped substrate geometry which provided good thermal contact to a temperature controlled body. Films were deposited at normal incidence and at 200, 300, and 40° incidence. Samples were stripped from their substrates, and since they were all 0 approximately 2000 A thick, a 650 KV electron microscope was used to directly observe the microstructure. The instantaneous stress in the films was found to be > NOTICE This report was ,prepared as an account of work sponsored by the United States Government. Neither i i the United States nor the United States Atomic Energy Commission, nor any of their employees, nor any. of their contractors, subcontractors, or their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness or usefulness of any information, apparatus, product or process disclosed, or represents that its use would not infringe privately owned rights.
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