The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.

A new ferroelectric memory array on a glass substrate has been developed using In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is employed as the gate dielectric layer of the FeTFT. All the fabrication processes were performed below 200 • C. The fabricated memory successfully demonstrated disturb-free write/readout operation. The current ratio between the "1" and "0" states is about 10 4 . IndexTerms-Disturb-free, ferroelectric memory, In-Ga-Zn-O (IGZO), thin-film transistor (TFT).

The adhesion between aluminum (Al) foil and cast polypropylene (CPP) film laminated with mixtures of amorphous- and crystalline-maleic anhydride-grafted ethylene-propylene-diene monomer (MAH-g-EPDM) rubbers and highly reactive polybutene (HRPB) as the adhesives was investigated. Specifically, the HRPB was used as an adhesion promoter of the MAH-g-EPDM rubbers and CPP as well as a compatibilizer of two kinds of MAH-g-EPDM rubbers having limited miscibility. To introduce strong chemical bonds between the MAH-g-EPDM rubbers and Al foil, the surface of Al foil was treated with 3-aminopropyl triethoxysilane (APTES). The weak adhesion between Al foil and MAH-g-EPDM rubbers was improved by imidization between the amine groups (–NH2) of APTES and the maleic anhydride groups (MAH) of MAH-g-EPDM rubbers. The effects of the composition of adhesives, tempering time and adhesive thickness were also studied to optimize the adhesion of the CPP/Al foil laminates. We concluded that MAH-g-EPDM rubber based adhesives containing HRPB can be applied for the lamination of Al foil and CPP films to satisfy the requirements of high-performance packaging materials for various purposes.

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We investigated the effect of the light-induced bias instability of indium-gallium-zinc oxide(IGZO) thin film transistors. The IGZO TFT exhibited the excellent subthreshold gate swing of 0.12V/decade, Vth of -0.5V, and high Ion/off ratio of >10 9 as well as a high field-effect mobility of 26.7 cm 2 /Vs. The Vth is not changed after positive bias illumination stress (PBIS) for 10000sec. However, the Vth is -8V after negative bias illumination stress (NBIS) for 10000sec. This phenomenon can be attributed the trapping of the photon-induced charges into the gate dielectric/active interface. We fabricated transparent AM-OLED driven by highly stable bottom gate IGZO TFT array