InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors with High Mobility and High Uniformity

Choi, Ji Hun; Yang, Jong‐Heon; Nam, Sooji; Pi, Jae‐Eun; Kim, Hee‐Ok; Kwon, Oh‐Min; Park, Eun-Suk; Hwang, Chi‐Sun; Cho, Sung Haeng

doi:10.1109/led.2016.2602284

Cited by 18 publications

(13 citation statements)

References 17 publications

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“…Another preferable approach is the structure engineering. Heterostructure is usually designed: a rapid transport front channel combined with a high resistance back channel . The dense back channel can prohibit the oxygen and water absorption to improve the stability.…”

Section: Introductionmentioning

confidence: 99%

Solution Processed AlInO/In₂O₃ Heterostructure Channel Thin Film Transistor with Enhanced Performance

Liu

Chen

Liang

et al. 2019

Adv Elect Materials

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Thin film transistors (TFTs) with solution processed AlInO/In2O3 heterostructure channels are demonstrated with enhanced performance. TFTs with single AlInO channels with various Al concentrations are used for comparison. Appropriate concentrations of Al in AlInO single layer can slightly improve the TFT performance. For the AlInO layer with Al concentration higher than 20%, the resistance is so large that no typical transfer characteristics are observed. In contrast, the overall performances are greatly improved using the AlInO/In2O3 heterostructure channel. High field effect mobility is achieved greater than 40 cm2 V−1 s−1 with a sub threshold slope of 0.7 V decade−1 and on/off ratio of 107 from the heterostructure TFT with a AlInO (30%) top layer. The mobility is affected by the tunnel contact series resistance, which can be modulated by the thickness of the AlInO layer. The enhanced field effect mobility is attributed to the formation of 2D electron gas confined at the AlInO/In2O3 interface, which results in a bulk accumulation effect. Finally, improved positive bias stress stability is obtained by inducing the AlInO top layer with a strong AlO bond. The as investigated results show a very promising future for oxide thin film transistor performance enhancements via heterostructure engineering.

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Section: Introductionmentioning

confidence: 99%

Solution Processed AlInO/In₂O₃ Heterostructure Channel Thin Film Transistor with Enhanced Performance

Liu

Chen

Liang

et al. 2019

Adv Elect Materials

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“…Figure d shows the transfer curves of the ZnO/AlZnO TFT, where ZnO act as the front channel and AlZnO (5% Al-doped ZnO) is a back channel. As the AlZnO layer has a higher electron concentration than ZnO, a very thin layer of AlZnO (5 nm) is used to confine the electrons as 2DEG. , The 2DEG enhances the electrical performance of the heterojunction devices. ,,,− As a result, there exists an accumulation of carriers in AlZnO and the TFT shows an enhanced field-effect mobility up to 82.57 cm 2 /V s. The ZnO/AlZnO TFT exhibits V TH of 3.20 V and SS of 123 mV/dec. A highly resistive 5 nm YZnO layer is introduced on top of ZnO/AlZnO, which can protect the device from the moisture absorption from the atmosphere .…”

Section: Resultsmentioning

confidence: 99%

Triple-Stack ZnO/AlZnO/YZnO Heterojunction Oxide Thin-Film Transistors by Spray Pyrolysis for High Mobility and Excellent Stability

Saha

Billah

Jang

2021

ACS Appl. Mater. Interfaces

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We demonstrate a high mobility, triple-stack ZnO/AlZnO/YZnO heterojunction thin-film transistor (TFT) using the semiconductors deposited by spray pyrolysis at 350 °C on an Al2O3 gate insulator. A thin layer (5 nm) of AlZnO on the top of ZnO used as an active layer of an inverted coplanar-structured TFT increases the field-effect mobility (μFE) from 42.56 to 82.7 cm2 V–1 s–1. An additional 5 nm thick YZnO on the top of the ZnO/AlZnO TFT improves the electrical stability by reducing the defects in the bulk ZnO, AlZnO, and at the interface AlO x /ZnO. The ZnO-based materials show a nanocrystalline structure with the grain size less than 20 nm. The triple-stack oxide TFT shows a μFE of 71.3 cm2 V–1 s–1 with a threshold voltage (V TH) of 2.85 V. The hysteresis voltage for pristine ZnO, ZnO/AlZnO, and ZnO/AlZnO/YZnO TFTs is 0.52, 0.24, and 0.02 V, respectively. The ZnO/AlZnO/YZnO TFT shows a negligible V TH shift under temperature bias stress for 3600 s at 60 °C and excellent environmental stability over a few months, which is due to the presence of stronger Y–O and Al–O bonds in the back channel. The threshold voltage shift under positive bias temperature stress for pristine ZnO, ZnO/AlZnO, and ZnO/AlZnO/YZnO TFTs is 0.78, 0.40, and 0.15 V, respectively. Compared to the pristine ZnO TFT, the ZnO/AlZnO/YZnO TFT shows better environmental and bias stabilities with improved hysteresis. The experimental data of ZnO/AlZnO and ZnO/AlZnO/YZnO TFTs can be fitted by technology computer-aided design (TCAD) simulation using the density of states model of the oxide semiconductors. From the TCAD simulation, it is found that a 2D-like electron gas is formed at the narrow AlZnO layer between ZnO and YZnO.

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“…Here, it is possible to minimize the channel length up to the limitation of the lithography resolution, and therefore the integration density, such as the pixel resolution, can be maximized. On the other hand, the etch‐stopper scheme will have a longer channel length owing to the overlap consideration between the etch stop layer and source/drain (S/D) layer . The optical operation part above the reflector was placed at the upper level of the panel.…”

Section: Methodsmentioning

confidence: 99%

Evolution of spatial light modulator for high‐definition digital holography

Choi

Hwang

et al. 2019

ETRI Journal

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Since the late 20th century, there has been rapid development in the display industry. Only 30 years ago, we used big cathode ray tube displays with poor resolution, but now most people use televisions or smartphones with very high‐quality displays. People now want images that are more realistic, beyond the two‐dimensional images that exist on the flat screen, and digital holography—one of the next‐generation displays—is expected to meet that need. The most important parameter that determines the performance of a digital hologram is the pixel pitch. The smaller the pixel pitch, the higher the level of hologram implementation possible. In this study, we fabricated the world‐smallest 3‐μm‐pixel‐pitch holographic backplane based on the spatial light modulator technology. This panel could display images with a viewing angle of more than 10°. Furthermore, a comparative study was conducted on the fabrication processes and the corresponding holographic results from the large to the small pixel‐pitch panels.

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InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors with High Mobility and High Uniformity

Cited by 18 publications

References 17 publications

Solution Processed AlInO/In₂O₃ Heterostructure Channel Thin Film Transistor with Enhanced Performance

Solution Processed AlInO/In₂O₃ Heterostructure Channel Thin Film Transistor with Enhanced Performance

Triple-Stack ZnO/AlZnO/YZnO Heterojunction Oxide Thin-Film Transistors by Spray Pyrolysis for High Mobility and Excellent Stability

Evolution of spatial light modulator for high‐definition digital holography

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InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors with High Mobility and High Uniformity

Cited by 18 publications

References 17 publications

Solution Processed AlInO/In2O3 Heterostructure Channel Thin Film Transistor with Enhanced Performance

Solution Processed AlInO/In2O3 Heterostructure Channel Thin Film Transistor with Enhanced Performance

Triple-Stack ZnO/AlZnO/YZnO Heterojunction Oxide Thin-Film Transistors by Spray Pyrolysis for High Mobility and Excellent Stability

Evolution of spatial light modulator for high‐definition digital holography

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About

Solution Processed AlInO/In₂O₃ Heterostructure Channel Thin Film Transistor with Enhanced Performance

Solution Processed AlInO/In₂O₃ Heterostructure Channel Thin Film Transistor with Enhanced Performance