Here we report on inkjet printing of a conductive amorphous copper oxide (CuO) ink and of semiconducting cadmium sulfide (CdS) quantum dots under ambient conditions and at low temperature to form functional thin films, which were used for the fabrication of Schottky diodes. Inkjet printed CuO features were sintered using a commercial photonic sintering tool in order to form the diode rectifying contacts. This was accomplished by using the tool's proprietary high-intensity flash lamp at very short pulse durations, ensuring a low processing temperature that favors the usage of low-cost substrates. The photonic sintering method was also used for sintering CdS films, resulting in a more efficient removal of the organic moieties around the CdS nanoparticles than a wet chemical KOH treatment. The here reported process allows the deployment of a low-cost polyethylene terephthalate (PET) polymer foil as the substrate material. The initial results showed modest performance of th e fabricated Schottky diode. Nevertheless, the general approaches demonstrate new routes for low temperature manufacturing methods for functional electronic layers based on accordingly developed functional materials utilising amorphous metal oxides and quantum dots

The current-voltage characteristics of Au/perylene-monoimide (PMI)/n-Si Schottky device have been investigated at a wide temperature range between 75 and 300 K in detail. The measured current-voltage (I-V) characteristics of the device show a good rectification behavior at all temperatures. The electronic parameters such as the ideality factor and the barrier height are determined from the experimental data using standard current-voltage analysis method and also temperature dependence of these parameters is analyzed. In addition to the standard analysis, using the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the device, and a good agreement is obtained between relevant diode parameters. It was observed that Au/PMI/n-Si Schottky diodes exhibit space charge limited (SCL) conduction at all temperatures. Therefore, we have analyzed this SCL current mechanism in more detail. From this analysis, several electronic parameters related with the SCL mechanism are determined, and it is found that Poole-Frenkel effect is dominant in reverse bias.

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