We report on the systematic investigation of the optical properties of a selectively grown quantum dot gain material assisted by block-copolymer lithography for potential applications in active optical devices operating in the wavelength range around 1.55 µm and above. We investigated a new type of diblock copolymer PS-b-PDMS (polystyrene-blockpolydimethylsiloxane) for the fabrication of silicon oxycarbide hard mask for selective area epitaxy of InAs/InP quantum dots. An array of InAs/InP quantum dots was selectively grown via droplet epitaxy. Our detailed investigation of the quantum dot carrier dynamics in the 10-300 K temperature range indicates the presence of a density of states located within the InP bandgap in the vicinity of quantum dots. Those defects have a substantial impact on the optical properties of quantum dots.
Off-axis electron holography was used to reveal remote doping in GaAs nanowires occurring during in-situ annealing in a TEM. Dynamic changes to the electrostatic potential caused by carbon dopant diffusion upon annealing were measured across GaAs nanowires with radial p-p+ core-shell junctions. Electrostatic potential profiles were extracted from holographic phase maps and built-in potentials (Vbi) and depletion layer widths (DLWs) were estimated as function of temperature over 300-873 K. Simulations in absence of remote doping predict a significant increase of Vbi and DLWs with temperature. In contrast, we measured experimentally a nearly constant Vbi and a weak increase of DLWs. Moreover, we observed the appearance of a depression in the potential profile of the core upon annealing. We attribute these deviations from the predicted behavior to carbon diffusion from the shell to the core through the nanowire sidewalls, i.e. to remote doping, becoming significant at 673 K. The DLW in the p and p+ regions are in the 10-30 nm range.
We present a wearable device with III–V nanowires in a flexible polymer, which is used for active mechanical tuning of the second-harmonic generation intensity.
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