The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of LixCoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.
A substantial resistive switching of LixCoO2 mixed‐conductor thin films is observed for the first time. The occurrence of possible bipolar switching in these oxide thin films is by current–voltage curves, investigated by conducting‐probe atomic force microscopy (CP‐AFM). The films are incorporated into an {Au/LixCoO2/p++Si} device and exhibit a significant resistive‐switching process involving a ratio of over four orders of magnitude.
In situ, high-resolution, gamma-ray spectrometry of a total number of 70 outdoor and 20 indoor representative measurements were performed in preselected, common locations of the main urban areas of Cyprus. Specific activities and gamma absorbed dose rates in air due to the naturally occurring radionuclides of 232 Th and 238 U series, and 40 K are determined and discussed. Effective dose rate to the Cyprus population due to terrestrial gamma radiation is derived directly from this work. The results obtained outdoors match very well with those derived previously by high-resolution gamma spectrometry of soil samples, which were collected from the main island bedrock surface. This implies that the construction and building materials in urban areas do not affect the external gamma dose rate; thus they are mostly of local origin. Finally, the indoor/outdoor gamma dose ratio was found to be 1.4 ± 0.5.
Controlling the semiconductor-to-metal transition temperature in epitaxial VO thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO epitaxial thin films grown on TiO substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V-V bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO/TiO multilayer structures.
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