Si02 layers on Si substrates are obtained in planar reactor by decomposition of tetra-ethoxy silane in oxygen plasma. The layers deposited at substrate temperature of 300 "C show some porosity, hygroscopicity, increased etching rate, and water incorporated, so that MOS structures that use such layers have unstable C-U curves and high density of interface states. These characteristics can substantially be improved after annealing a t 400 "C in H,. The etching rate also decreased but reached the value that is characteristic of thermal SiO, only after high temperature annealing.Si02-Schichten auf Si-Substraten werden durch Zersetzung von Tetraethoxysilan im Sauerstoffsplasma eines Planarreaktors erhalten. Die Schichten, die bei einer Substrattemperatur von 300 "C abgeschieden werden, zeigen Porositat, Hygroskopie, erhohte Atzrate und eingeschlossenes Wasser, so de13 MOS Strukturen, die aus diesen Schichten hergestellt werden, unstabile C-U-Kurven und hohe Interface-Zustandsdichten besitzen. Nach Tempern bei 400 "C in H2-Atrnosphare werden diese Charakteristiken wesentlich verbessert. Obwohl sich die Atzrate verringert, erreicht sie den fur thermisches SiO, typischen Wert nur nach einer Hochtemperaturbehandlung.
Magnesium oxide thin films were deposited at an average evaporation rate of 1.8 nm s-' onto different crystalline alumina substrates and amorphous float glass. The deposits were made in an electron-beam evaporator at substrate temperatures between 25OC and 190°C under different oxygen partial pressures. Films of 0.1, 0.5 and 1 pm thickness were deposited. These coatings were investigated by grazing incidence diffractometry (GID) to vary the depth of penetration. For films 0.1 pm thick the additional use of grazing incidence x-ray reflectometry (GIXR) was possible. The deposited films were polycrystalline with different (100) textures depending on the substrate temperature. All the MgO thin-film reflexes measured were strongly broadened compared with the reflexes of a standard polycrystalline MgO material. The crystal size and the microstrain of the MgO coatings were calculated by profile analysis using the Fourier transformation method. It was demonstrated that the x-ray profiles of the MgO reflexes are influenced by the roughness of the substrate surface. Only small gradients were found in the particle sizes and microstrains within the deposited films. The oxygen partial pressure did not significantly influence the film properties measured by GID. The GIXR roughness and mass density measurements agreed with the results of GID. Magnesium oxide films deposited at higher temperatures show a diminished crystallinity and less interface roughness.
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