Deposition of A1N thin films by magnetron reactive sputtering

Gerova, E. V.; Ivanov, N. P.; Kirov, K.

doi:10.1016/0040-6090(81)90482-x

Cited by 45 publications

(5 citation statements)

References 17 publications

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“…From the inverse of the slope of the linear graph in Fig. 8a, the bulk k value of the grown film is estimated to be 7.9, which is a reasonable k value for a partially oxidized AlN film considering the k of AlN ͑6-18͒ [9][10][11]28,29 and Al 2 O 3 ͑6-9͒. [30][31][32] The extrapolation of the graph to the y axis shows that an interfacial layer was formed that has an EOT of ϳ0.4 nm which may be comprised of Si͑O͒N x and AlSi͑O͒N x .…”

Section: Resultsmentioning

confidence: 99%

Properties of Aluminum Nitride Thin Films Deposited by an Alternate Injection of Trimethylaluminum and Ammonia under Ultraviolet Radiation

Hwang

Kim

2006

J. Electrochem. Soc.

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Aluminum nitride ͑AlN͒ thin films were prepared on p-type Si ͑100͒ wafers using a sequential injection of trimethylaluminum ͑TMA͒ and ammonia under ultraviolet ͑UV͒ radiation at a temperature of 370°C. Films containing low carbon concentration ͑ Ͻ0.5 atom%͒ were deposited with a dielectric constant of ϳ7.9. UV radiation effects were investigated for two different radiation conditions ͑UV exposure during the TMA and NH 3 injection step, respectively͒. A reduction in the hydrogenated nitrogen concentration was observed by X-ray photoelectron spectroscopy when UV photons were radiated during the TMA injection step. The leakage current of a 9.5-nm-thick AlN film followed the Poole-Frenkel conduction mechanism, and an optical dielectric constant of 4.2 and a trap energy depth of 0.83 eV were extracted from the Poole-Frenkel fitting of the current-density-voltage results at temperatures ranging from 20 to 170°C. The film deposited under UV radiation during TMA injection showed a higher dielectric constant than the films deposited without radiation. have attracted a great deal of interest as gate dielectrics of future metal-oxide-semiconductor field-effect transistor ͑MOSFET͒ devices because the continuous scaling down of the SiO 2 gate oxide reaches its physical thickness limit. 1-8 However, there are several problems to overcome in order to apply high-k films as gate dielectrics. Most vapor-phase grown high-k thin films appear to have interfacial layers ͑IL͒ having a lower-k value at the interface with the Si substrate due to the presence of excess oxidizing elements, 1-4 and the concurrent Si diffusion into the growing films. 5 This reduces the overall capacitance density, and should therefore be minimized in order to realize the high-k characteristics. High-temperature post-annealing is inevitable for current MOSFET fabrication processes. During post-annealing, the structural and electrical performance of high-k films is usually degraded. The compatibility with the polycrystalline Si ͑poly-Si͒ gate is another problem of high-k oxides. During activation annealing, dopant penetration such as boron and phosphorus from the poly-Si gate results in a shift of the flatband voltage and an increase of the leakage current. 6 Therefore, nitride films or oxynitride films have been studied to suppress the interface layer formation and diffusion. 1,3 AlN is promising as a reaction barrier dielectric in near-future MOSFET devices because the AlN film works as a good reaction barrier layer ͑RBL͒ between a high-k film and Si substrate by suppressing the formation of SiO 2 or silicate. 9-11 AlN has a higher k value compared to Si 3 N 4 , thereby minimizing the capacitance loss when it is adopted as RBL. The nitride film also suppresses boron penetration from the poly-Si gate electrode. 6 However, the growth and characterization of AlN films as RBL for high-k applications by either chemical vapor deposition or atomic layer deposition, which are believed to be the processes of choice for mass production, have rarely been reported.In th...

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Section: Resultsmentioning

confidence: 99%

Properties of Aluminum Nitride Thin Films Deposited by an Alternate Injection of Trimethylaluminum and Ammonia under Ultraviolet Radiation

Hwang

Kim

2006

J. Electrochem. Soc.

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“…Nevertheless, making bulk AlN often requires sintering at very high temperatures under controlled atmosphere, which is not economically feasible. AlN thin films offering an alternative to the bulk AlN are often produced by reactive magnetron sputtering . Conventionally making such nitride films, similar to other nitride thin films, requires a low base pressure (high vacuum) before sputtering to minimize the influences of residual gases that may cause the formation of oxide or oxynitride overlayers.…”

Section: Introductionmentioning

confidence: 99%

Low Vacuum Deposition of Aluminum Nitride Thin Films by Sputtering

Yao

2012

Int J Applied Ceramic Tech

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Conventionally, sputtering deposition of thin films requires a low base pressure (high vacuum) to minimize influences of residual gases. Here, a high base pressure (low vacuum) was used, which can reduce significantly the overall processing time. Aluminum nitride ( AlN ) was selected as a model system of dielectric nitrides. All the analyses revealed that the obtained films under a low vacuum environment within specific processing windows exhibited characteristics similar to those of high‐vacuum made AlN films. Such a low vacuum deposition technique takes advantages of kinetically favorable formation of the nitride films and hence, has great potentials in many more technological applications.

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“…AlON films are widely applied as protective coatings against wear, diffusion and corrosion [1][2][3], optical coatings [4][5], optoelectronics, microelectronics [6,7], and other fields of technology. This is due to the possibility for a broad combination of the physical and chemical properties of the oxynitride films with variable concentrations of aluminum, oxygen, and nitrogen.…”

Section: Introductionmentioning

confidence: 99%