We report on the first fabrication of nanostructures with exactly resonant light revealing the quantum character of the atom-light interaction. Classically the formation of nanostructures is not expected; thus, the observed formation of complex periodic line patterns can be explained only by treating atom-light interaction and propagation of the atoms quantum mechanically. Our numerical quantum calculations are in quantitative agreement with this experimental finding. Moreover, the theory predicts that for small detunings nanostructures with lambda/4 period can be produced, which beats the standard nanofabrication limit of lambda/2. Our experiments confirm this prediction.
The introduction of ever higher source powers in EUV systems causes increased risks for contamination and degradation of EUV masks and pellicles. Appropriate testing can help to inventory and mitigate these risks. To this end, we propose EBL2: a laboratory EUV exposure system capable of operating at high EUV powers and intensities, and capable of exposing and analyzing EUV masks. The proposed system architecture is similar to the EBL system which has been operated jointly by TNO and Carl Zeiss SMT since 2005. EBL2 contains an EUV Beam Line, in which samples can be exposed to EUV irradiation in a controlled environment. Attached to this Beam Line is an XPS system, which can be reached from the Beam Line via an in-vacuum transfer system. This enables surface analysis of exposed masks without breaking vacuum. Automated handling with dual pods is foreseen so that exposed EUV masks will still be usable in EUV lithography tools to assess the imaging impact of the exposure. Compared to the existing system, large improvements in EUV power, intensity, reliability, and flexibility are proposed. Also, in-situ measurements by e.g. ellipsometry is foreseen for real time monitoring of the sample condition. The system shall be equipped with additional ports for EUVR or other analysis tools. This unique facility will be open for external customers and other research groups.
TNO is building EBL2 as a publicly accessible test facility for EUV lithography related development of photomasks, pellicles, optics, and other components. EBL2 will consist of a Beam Line, an XPS system, and sample handling infrastructure. EBL2 will accept a wide range of sample sizes, including EUV masks with or without pellicles. All types of samples will be loaded using a standard dual pod interface. EUV masks returned from EBL2 will retain their NXE compatibility. The Beam Line provides high intensity EUV irradiation from a Sn-fueled EUV source. EUV intensity, pupil, spectrum, and repetition rate are all adjustable. In-situ measurements by ellipsometry will enable real time monitoring of the sample condition. The XPS will be capable of analyzing the full surface area of EUV masks and pellicles, as well as performing angle resolved analysis on smaller samples. Sample transfer between the XPS and the Beam Line will be possible without breaking vacuum.
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