EBL2, a flexible, controlled EUV exposure and surface analysis facility

Sligte, E. te; Koster, N.B.; Molkenboer, F.T.; Deutz, A.F.

doi:10.1117/12.2240302

Cited by 4 publications

(2 citation statements)

References 2 publications

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“…For this purpose, TNO has built an EUV exposure facility named EUV beam-line two (EBL2) equipped with in-situ imaging ellipsometer and in-vacuo XPS. A more detailed description can be found in previous publications [1], [2], [3] .…”

Section: Introductionmentioning

confidence: 99%

Lifetime test on EUV photomask with EBL2

Bender

Jonckheere

et al. 2019

Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology

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TNO has built EBL2, an EUV exposure facility equipped with an in vacuo X-ray photoelectron spectroscopy setup (XPS) and an in-situ ellipsometer. EBL2 enables lifetime testing of EUV optics, photomasks, pellicles and related components under development in relevant EUV scanner and source conditions, which was previously not available to industry. This lifetime testing can help the industry to prepare for high volume production using EUV lithography by bringing forward information about material behavior which facilitates the development cycle. This paper describes an EUV photomask lifetime test performed at EBL2. The mask was exposed to different EUV doses under a controlled gas and temperature environment. To investigate how EUV light interacts with the mask, various analysis techniques were applied before and after EUV exposure. In-situ XPS was used to investigate elemental compositions of the mask surface. An ex-situ critical dimension scanning electron microscope (CD-SEM) and an atomic force microscope (AFM) were used to explore the impact of EUV light on critical dimensions (CD) and feature profiles. In addition, EUV reflectometry (EUVR) was used to investigate the change of reflectivity after EUV exposures. The exposure conditions are reported, as well as an analysis of the effects observed.

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Section: Introductionmentioning

confidence: 99%

Lifetime test on EUV photomask with EBL2

Bender

Jonckheere

et al. 2019

Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology

Self Cite

View full text Add to dashboard Cite

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“…A full system description can be found in ref [4] and [5], in this part a short summary of EBL2 system will be given. EBL2 consists of a) Ushio EUV source mounted on a track for easy maintenance access, b) collector module consisting of two elliptical grazing incidence mirrors with intermediate focus, c) exposure chamber with in-situ diagnostics, d) sample handler with vacuum and atmospheric handler, dual pod opener, storage capability and cleaning chamber, and e) XPS system capable of handling reticles for surface analysis of EBL2 and other samples.…”

Section: System Layoutmentioning

confidence: 99%

First light and results on EBL2

et al. 2017

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Recently TNO has established EBL2; an exposure and analysis facility for testing EUV optics, reticles and pellicles under relevant EUV scanner and source conditions. The facility and EUV source complies with the ASML power roadmap of EUV systems up to a power of 500 W IF. This enables life time testing of EUV optics, reticles and pellicles under conditions which are not yet available to industry, helping the industry in preparing for HVM production.The EBL2 facility consists of a EUV source, collector optics, exposure chamber, XPS chamber, and automated sample handling. The exposure chamber has capabilities for plasma analysis, imaging ellipsometry for in-situ analysis of the sample under radiation, photodiodes for power measurements and a scintillator disk for spot profiles. It is possible to insert spectral purity filters and apertures in the beam line for wavelength tuning and beam shaping. The source is Sn fueled DPP source made by our partner Ushio and is based on the proven technology from the ASML AD-tools, providing a similar spectrum and pulse shape as used in the ASML NXE scanners. We show the results of first light obtained in December 2016. The XPS is capable of handling and analyzing full reticles and data on the obtained surface sensitivity and imaging quality will be shown.

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Measurements of ion fluxes in extreme ultraviolet-induced plasma of new EUV-beam-line 2 nanolithography research machine and their applications for optical component tests

Veldhoven

Storm

et al. 2023

Journal of Vacuum Science &Amp; Technology B

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In modern extreme ultraviolet (EUV) lithography machines, sensitive optical components, such as multilayer mirrors and photomasks, may be affected by plasma interactions. The new 13.5 nm EUV-beam-line 2, designed to provide accelerated tests for next generation lithography, is used to investigate EUV-induced plasma phenomena. First systematic measurements of ion fluxes produced in EUV-induced hydrogen plasma are reported, with operating conditions including 5 and 20 Pa gas pressure, 3 kHz EUV pulse repetition rate, and 4.2 W total EUV beam power produced in a 10–15 ns EUV pulse. Space- and time-resolved distributions of ion fluxes and ion energies were measured using a retarding-field ion energy analyzer mounted next to the EUV beam. Typical ion energies were in the range of 1–8 eV and typical ion fluxes were in the range of 2–8 × 1017 ions m−2 s−1. The obtained ion fluxes are applied in a photomask lifetime test to understand the material effects after an EUV exposure.

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EBL2, a flexible, controlled EUV exposure and surface analysis facility

Cited by 4 publications

References 2 publications

Lifetime test on EUV photomask with EBL2

Lifetime test on EUV photomask with EBL2

First light and results on EBL2

Measurements of ion fluxes in extreme ultraviolet-induced plasma of new EUV-beam-line 2 nanolithography research machine and their applications for optical component tests

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