Hoven, van den, G.N.; Snoeks, E.; Polman, A.; Uffelen, van, J.W.M.; Oei, Y.S.; Smit, M.K. Published in: Applied Physics LettersPublished: 01/01/1993 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Hoven, van den, G. N., Snoeks, E., Polman, A., Uffelen, van, J. W. M., Oei, Y. S., & Smit, M. K. (1993). Photoluminescence characterization of Er-implanted Al2O3 films. Applied Physics Letters, 62(24), 3065-3067. General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. A1,03 films on oxidized Si substrates were implanted with 800 keV Er ions to peak concentrations ranging from 0.01 to 1 at. %. The samples show relatively broad photohnninescence spectra centered at il= 1.533 pm, corresponding to intra-4f transitions in Er3+. At an Er pea k concentration of 0.23 at. %, post-implantation thermal annealing up to 950 "C increases the photoluminescence intensity by a factor 40. This is a result of defect annealing, which increases the luminescence lifetime from 1 to 7 ms, as well as an increase in the Er3+ active fraction. High Er concentrations are achieved with only moderate concentration quenching effects.
Hoven, van den, G.N.; Snoeks, E.; Polman, A.; Dam, van, C.; Uffelen, van, J.W.M.; Smit, M.K. Published in:Journal of Applied Physics Published: 01/01/1996 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Hoven, van den, G. N., Snoeks, E., Polman, A., Dam, van, C., Uffelen, van, J. W. M., & Smit, M. K. (1996). Upconversion in Er-implanted Al2O3 waveguides. Journal of Applied Physics, 79(3), 1258-1266. General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. When pumped with a 1.48 m laser diode, Er-implanted Al 2 O 3 ridge waveguides emit a broad spectrum consisting of several distinct peaks having wavelengths ranging from the midinfrared ͑1.53 m͒ to the visible ͑520 nm͒. In order to explain these observations, three different upconversion mechanisms are considered: cooperative upconversion, excited state absorption, and pair-induced quenching. It is found that for samples with a high Er concentration ͑1.4 at. %͒, cooperative upconversion completely dominates the deexcitation of the Er 3ϩ ions. For a much lower concentration ͑0.12 at. %͒, the influence of cooperative upconversion is strongly reduced, and another upconversion effect becomes apparent: excited state absorption. These conclusions are based on measurements of the luminescence emission versus pump intensity, and also on measured luminescence decay curves. The upconversion coefficient is found to be ͑4Ϯ1͒ϫ10 Ϫ18 cm 3 /s; the excited state absorption cross section is ͑0.9Ϯ0.3͒ϫ10 Ϫ21 cm 2 . It is shown that in spite of these upconversion effects, a high fraction of the Er 3ϩ can be excite...
Widely changing probability of surface damage creation induced by a single ion in the MeV ion energy range J.
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